12 Patents
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- US122306852025Multi-bridge Channel Field Effect Transistor with Multiple Inner Spacers
SAMSUNG ELECTRONICS CO., Ltd.
0 cites - US121913732025Method of Forming a Semiconductor Device with Capped Air-gap Spacer
SAMSUNG ELECTRONICS CO., Ltd.
0 cites - USRE0502532024Electronic Device and Method for Extracting and Using Semantic Entity in Text Message of Electronic Device
SAMSUNG ELECTRONICS CO., Ltd.
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- US120340422024Method of Manufacturing Multi-channel Field Effect Transistors
Samsung Electronics Co., Ltd.
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- US117356262023Semiconductor Device and Method of Manufacturing the Same
Samsung Electronics Co., Ltd.
0 cites - 0 cites
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