Patents/Assignees

Kepler Computing Inc.

218 patents in portfolio

US11792998utility2023
Process Integration Flow for Embedded Memory with Multi-pocket Masks for Decoupling Processing of Memory Areas from Non-memory Areas
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US11784164utility2023
3D Stacked Compute and Memory with Copper-to-copper Hybrid Bond
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US11785782utility2023
Embedded Memory with Encapsulation Layer Adjacent to a Memory Stack
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US11777504utility2023
Non-linear Polar Material Based Latch
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US11769543utility2023
Writing Scheme for 1TNC Ferroelectric Memory Bit-cell with Plate-lines Parallel to a Bit-line and with Individual Switches and Control on the Plate-lines of the Bit-cell
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US11769790utility2023
Rapid Thermal Annealing (RTA) Methodologies for Integration of Perovskite-material Based Trench Capacitors
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US11770936utility2023
Stack of Planar Capacitors Including Capacitors with Non-linear Polar Material and Linear Dielectric for Common Mode Compensation in a Memory Bit-cell
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US11764190utility2023
3D Stacked Compute and Memory with Copper Pillars
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US11764790utility2023
Majority Logic Gate Having Paraelectric Input Capacitors Coupled to a Conditioning Scheme
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US11765908utility2023
Memory Device Fabrication Through Wafer Bonding
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US11765909utility2023
Process Integration Flow for Embedded Memory Enabled by Decoupling Processing of a Memory Area from a Non-memory Area
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US11757043utility2023
Doped Polar Layers and Semiconductor Device Incorporating Same
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US11757452utility2023
Or-and-invert Logic Based on a Mix of Majority or Minority Logic Gate with Non-linear Input Capacitors and Other Logic Gates
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US11758708utility2023
Stack of Non-planar Capacitors Including Capacitors with Non-linear Polar Material and Linear Dielectric for Common Mode Compensation in a Memory Bit-cell
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US11758738utility2023
Integration of Ferroelectric Memory Devices with Transistors
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US11750197utility2023
And-or-invert Logic Based on a Mix of Majority OR Minority Logic Gate with Non-linear Input Capacitors and Other Logic Gates
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US11751403utility2023
Common Mode Compensation for 2T1C Non-linear Polar Material Based Memory Bit-cell
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US11741428utility2023
Iterative Monetization of Process Development of Non-linear Polar Material and Devices
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US11742860utility2023
Fabrication of a Majority Logic Gate Having Non-linear Input Capacitors
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US11744081utility2023
Ferroelectric Device Film Stacks with Texturing Layer Which Is Part of a Bottom Electrode, and Method of Forming Such
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