Patents/Assignees

Kepler Computing Inc.

218 patents in portfolio

US11735245utility2023
Read Scheme for Multi-element Gain Ferroelectric Memory Bit-cell with Plate-line Parallel to Word-line to Minimize Read or Write Disturb Effects
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US11737283utility2023
Method of Forming a Stack of Non-planar Capacitors Including Capacitors with Non-linear Polar Material and Linear Dielectric for Common Mode Compensation in a Memory Bit-cell
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US11729991utility2023
Common Mode Compensation for Non-linear Polar Material Based Differential Memory Bit-cell
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US11729995utility2023
Common Mode Compensation for Non-linear Polar Material 1tnc Memory Bit-cell
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US11721690utility2023
Method of Adjusting Threshold of a Ferroelectric Capacitive-input Circuit
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US11716083utility2023
Asynchronous Circuit with Threshold Logic
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US11716084utility2023
Pull-up and Pull-down Networks Controlled Asynchronously by Majority Gate or Minority Gate Logic
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US11716085utility2023
Pull-up and Pull-down Networks Controlled Asynchronously by Threshold Gate Logic
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US11716086utility2023
Asynchronous Circuit with Majority Gate or Minority Gate Logic and 1-input Threshold Gate
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US11716858utility2023
Ferroelectric Device Film Stacks with Texturing Layer Which Is Part of a Bottom Electrode and a Barrier, and Method of Forming Such
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US11711083utility2023
Majority Gate Based Low Power Ferroelectric Based Adder with Reset Mechanism
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US11705905utility2023
Multi-function Ferroelectric Threshold Gate with Input Based Adaptive Threshold
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US11705906utility2023
Majority Logic Gate Having Ferroelectric Input Capacitors and a Pulsing Scheme Coupled to a Conditioning Logic
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US11699699utility2023
Multi-function Threshold Gate with Adaptive Threshold and Stacked Planar Ferroelectric Capacitors
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US11694737utility2023
Write Scheme for Multi-element Gain Ferroelectric Memory Bit-cell with Plate-line Parallel to Word-line to Minimize Write Disturb Effects
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US11696451utility2023
Common Mode Compensation for Non-linear Polar Material Based 1T1C Memory Bit-cell
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US11694940utility2023
3D Stack of Accelerator Die and Multi-core Processor Die
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US11696450utility2023
Common Mode Compensation for Multi-element Non-linear Polar Material Based Gain Memory Bit-cell
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US11688733utility2023
Method of Adjusting Threshold of a Paraelectric Capacitive-input Circuit
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US11670352utility2023
Apparatus and Method for Endurance of Non-volatile Memory Banks via Wear Leveling and Outlier Compensation
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