Patents/Assignees

Kepler Computing Inc.

218 patents in portfolio

US11664060utility2023
Writing Scheme for Multi-element Gain Ferroelectric Memory Bit-cell with Plate-lines Parallel to a Bit-line and with Individual Switches on the Plate-lines of the Bit-cell
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US11664371utility2023
Multi-function Threshold Gate with Adaptive Threshold and Stacked Planar Paraelectric Capacitors
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US11658664utility2023
Asynchronous Circuit with Majority Gate or Minority Gate Logic
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US11659714utility2023
Ferroelectric Device Film Stacks with Texturing Layer, and Method of Forming Such
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US11652482utility2023
Parallel Pull-up and Pull-down Networks Controlled Asynchronously by Threshold Logic Gate
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US11652487utility2023
Parallel Pull-up and Pull-down Networks Controlled Asynchronously by Majority Gate or Minority Gate Logic
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US11646071utility2023
Reading Scheme for Multi-element Gain Ferroelectric Memory Bit-cell with Plate-line Parallel to Bit-line and with Individual Switches and Control on Plate-lines of the Bit-cell
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US11641205utility2023
Reset Mechanism for a Chain of Majority or Minority Gates Having Paraelectric Material
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US11641747utility2023
Integration of a Ferroelectric Memory Device with a Transistor
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US11637090utility2023
Method of Forming a 3D Stacked Compute and Memory
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US11616507utility2023
Ferroelectric Based Latch
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US11610619utility2023
Pulsing Scheme for a 1TNC Ferroelectric Memory Bit-cell with Plate-line Parallel to Word-line to Minimize Read or Write Disturb Effects
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US11610620utility2023
Pulsing Scheme for a 1TNC Ferroelectric Memory Bit-cell with Plate-line Parallel to Bit-line to Minimize Read or Write Disturb Effects
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US11611345utility2023
NAND Based Sequential Circuit with Ferroelectric or Paraelectric Material
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US11605411utility2023
Method of Forming Stacked Ferroelectric Planar Capacitors in a Memory Bit-cell
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US11605413utility2023
Reading Scheme for Multi-element Gain Ferroelectric Memory Bit-cell with Plate-lines Parallel to a Bit-line and with Individual Switches on the Plate-lines of the Bit-cell
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US11545204utility2023
Non-linear Polar Material Based Memory Bit-cell with Multi-level Storage by Applying Different Voltage Levels
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US11545979utility2023
Compare Logic Based Sequential Circuit with Ferroelectric or Paraelectric Material
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