20 Patents
- US126204442026Operation Method for Three-dimensional Flash Memory Including Ferroelectric-based Data Storage Pattern and Back Gate
IUCF-HYU (INDUSTRY-UNIVERSITY COOPERATION FOUNDATION HANYANG UNIVERSITY)
0 cites - US126157762026Three Dimensional Semiconductor Device Having a Back-gate Electrode
Industry-university Cooperation Foundation Hanyang University
0 cites - US125882212026Three-dimensional Flash Memory with High Degree of Integration
IUCF-HYU (INDUSTRY-UNIVERSITY COOPERATION FOUNDATION HANYANG UNIVERISTY)
0 cites - US124759512025Method for Operating Three-dimensional Flash Memory
IUCF-HYU (Industry-university Cooperation Foundation Hanyang University)
0 cites - US123744112025Three-dimensional Flash Memory for Improving Integration and Operation Method Thereof
Samsung Electronics Co., Ltd.
0 cites - US122389282025Three-dimensional Flash Memory with Reduced Wire Length and Manufacturing Method Therefor
Samsung Electronics Co., Ltd.
0 cites - US122324302025Switching Device Having Bi-directional Drive Characteristics and Method of Operating Same
Samsung Electronics Co., Ltd.
0 cites - US122119402025Thin Film Transistor and Vertical Non-volatile Memory Device Including Transition Metal-induced Polycrystalline Metal Oxide Channel Layer
Samsung Electronics Co., Ltd.
0 cites - US1208241720243-dimensional Flash Memory Having Air Gap, and Method for Manufacturing Same
SAMSUNG ELECTRONICS CO., Ltd.
0 cites - 0 cites
- US119887022024Method and System for Inspection of Defective MTJ Cell in STT-MRAM
Samsung Electronics Co., Ltd.
0 cites - US119801092024Selection Element-integrated Phase-change Memory and Method for Producing Same
Samsung Electronics Co., Ltd.
0 cites - US119551772024Three-dimensional Flash Memory Including Middle Metallization Layer and Manufacturing Method Thereof
Samsung Electronics Co., Ltd.
0 cites - 0 cites
- US118827052024Three-dimensional Semiconductor Memory Device, Operating Method of the Same and Electronic System Including the Same
Samsung Electronics Co., Ltd.
0 cites - US118126612023Phase-change Memory Device Having Reversed Phase-change Characteristics and Phase-change Memory Having Highly Integrated Three-dimensional Architecture Using Same
Samsung Electronics Co., Ltd.
0 cites - 0 cites
- US116160812023Three-dimensional Semiconductor Memory Device Including Ferroelectric Thin Film and Manufacturing Method of the Same
SAMSUNG ELECTRONICS CO., Ltd.
0 cites - US115813272023Three-dimensional Flash Memory with Reduced Wire Length and Manufacturing Method Therefor
Samsung Electronics Co., Ltd.
0 cites - US115445382023Pulse Driving Apparatus for Minimising Asymmetry with Respect to Weight in Synapse Element, and Method Therefor
Samsung Electronics Co., Ltd.
0 cites