14 Patents
- US126193952026Memory Device Including Ternary Memory Cell
UNIST (ULSAN NATIONAL INSTITUTE OF SCIENCE AND TECHNOLOGY)
0 cites - 0 cites
- US123065312025Lithography and Method of Fabricating Semiconductor Device Using the Same
SAMSUNG ELECTRONICS CO., Ltd.
0 cites - US122496052025Ternary Inverter and Method of Manufacturing the Same
UNIST(ULSAN NATIONAL INSTITUTE OF SCIENCE AND TECHNOLOGY)
0 cites - US122043892025Regulator Circuit, an Electronic Device Including the Regulator Circuit, and a Processor Including the Regulator Circuit
SAMSUNG ELECTRONICS CO., Ltd.
0 cites - US121923152025Monitoring Circuit of Phase Locked Loop and Operating Method Thereof
SAMSUNG ELECTRONICS CO., Ltd.
0 cites - US121549502024Transistor, Ternary Inverter Comprising Same, and Transistor Manufacturing Method
UNIST (ULSAN NATIONAL INSTITUTE OF SCIENCE AND TECHNOLOGY)
0 cites - US120683812024Transistor, Ternary Inverter Including Same, and Transistor Manufacturing Method
UNIST(ULSAN NATIONAL INSTITUTE OF SCIENCE AND TECHNOLOGY)
0 cites - US120093932024Tunnel Field Effect Transistor and Ternary Inverter Comprising Same
UNIST(ULSAN NATIONAL INSTITUTE OF SCIENCE AND TECHNOLOGY)
0 cites - US119679622024Oscillation System Including Frequency-locked Loop Logic Circuit and Operating Method Thereof
SAMSUNG ELECTRONICS CO., Ltd.
0 cites - 0 cites
- US117894822023Bandgap Reference Circuit Including Resistivity Temperature Coefficient Cancellation Circuit, and Oscillator Circuit Including the Bandgap Reference Circuit
SAMSUNG ELECTRONICS CO., Ltd.
0 cites - US117361122023Digitally Controlled Oscillator Insensitive to Changes in Process, Voltage, Temperature and Digital Phase Locked Loop Including Same
SAMSUNG ELECTRONICS CO., Ltd.
0 cites - US117000052023Phase Locked Loop Generating Adaptive Driving Voltage and Related Operating Method
Samsung Electronics Co., Ltd.
0 cites