Patents/Inventors

Sungsoo Chi

HefeiCN18 patents

21 Patents

US123276002025
Memory with Error Checking and Correcting Unit
Changxin Memory Technologies, Inc.
0 cites
US123155962025
Word Line Driver, Word Line Driver Array, and Semiconductor Structure
CHANGXIN MEMORY TECHNOLOGIES, Inc.
0 cites
US122549212025
Sense Amplifier Circuit Architecture
CHANGXIN MEMORY TECHNOLOGIES, Inc.
0 cites
US122361412025
Memory Circuit and Memory
CHANGXIN MEMORY TECHNOLOGIES, Inc.
0 cites
US122303392025
Electronic Device and Driving Method Thereof
Changxin Memory Technologies, Inc.
0 cites
US122056282025
Sense Amplifier, Method for Driving Sense Amplifier, and Memory
CHANGXIN MEMORY TECHNOLOGIES, Inc.
0 cites
US121190472024
Readout Circuit Structure
CHANXIN MEMORY TECHNOLOGIES, Inc.
0 cites
US121128242024
Sense Amplifier Circuit and Data Read Method
CHANGXIN MEMORY TECHNOLOGIES, Inc.
0 cites
US121004412024
Readout Circuit Layout and Sense Amplification Circuit
CHANGXIN MEMORY TECHNOLOGIES, Inc.
0 cites
US120803402024
Control Circuit, Method for Reading and Writing and Memory
CHANGXIN MEMORY TECHNOLOGIES, Inc.
0 cites
US120336882024
Sense Amplification Structure and Memory Architecture
CHANGXIN MEMORY TECHNOLOGIES, Inc.
0 cites
US120272012024
Column Select Signal Cell Circuit, Bit Line Sense Circuit and Memory
CHANGXIN MEMORY TECHNOLOGIES, Inc.
0 cites
US120272322024
Word Line Driver Circuit and Memory
CHANGXIN MEMORY TECHNOLOGIES, Inc.
0 cites
US120025032024
Memory Circuit and Memory
Changxin Memory Technologies, Inc.
0 cites
US118940892024
Memory with Error Checking and Correcting Unit
CHANGXIN MEMORY TECHNOLOGIES, Inc.
0 cites
US118622392024
Bit Line Sense Circuit and Memory
CHANGXIN MEMORY TECHNOLOGIES, Inc.
0 cites
US118622842024
Sense Amplifier, Memory and Data Readout Method
CHANGXIN MEMORY TECHNOLOGIES, Inc.
0 cites
US118305692023
Readout Circuit, Memory, and Method of Reading Out Data of Memory
CHANGXIN MEMORY TECHNOLOGIES, Inc.
0 cites
US116109022023
Antifuse Array Structure and Memory
CHANGXIN MEMORY TECHNOLOGIES, Inc.
0 cites
US115942642023
Readout Circuit Layout Structure and Method of Reading Data
GHANGXIN MEMORY TECHNOLOGIES, Inc.
0 cites
US115810342023
Sense Amplification Circuit and Method of Reading Out Data
GHANGXIN MEMORY TECHNOLOGIES, Inc.
0 cites