13 Patents
- US125882492026Integrated Circuit Devices Including a Cross-coupled Structure
Samsung Electronics Co., Ltd.
0 cites - US125884892026Integrated Circuit Devices Including Stacked Elements and Methods of Forming the Same
Samsung Electronics Co., Ltd.
0 cites - US125576772026Backside Power Distribution Network Semiconductor Architecture Using Direct Epitaxial Layer Connection and Method of Manufacturing the Same
SAMSUNG ELECTRONICS CO., Ltd.
0 cites - 0 cites
- US123640182025Limited Lateral Growth of S/D Epi by Outer Dielectric Layer in 3-dimensional Stacked Device
Samsung Electronics Co., Ltd.
0 cites - US122305712025Integrated Circuit Devices Including a Power Rail and Methods of Forming the Same
Samsung Electronics Co., Ltd.
0 cites - US121837382024Cross-coupled Gate Design for Stacked Device with Separated Top-down Gate
SAMSUNG ELECTRONICS CO., Ltd.
0 cites - US121425642024Backside Power Distribution Network Semiconductor Package and Method of Manufacturing the Same
SAMSUNG ELECTRONICS CO., Ltd.
0 cites - US121441632024Selective Double Diffusion Break Structures for Multi-stack Semiconductor Device
SAMSUNG ELECTRONICS CO., Ltd.
0 cites - US121319962024Stacked Device with Backside Power Distribution Network and Method of Manufacturing the Same
Samsung Electronics Co., Ltd.
0 cites - US121257882024Through Silicon Buried Power Rail Implemented Backside Power Distribution Network Semiconductor Architecture and Method of Manufacturing the Same
SAMSUNG ELECTRONICS CO., Ltd.
0 cites - US118814552024Through Silicon Buried Power Rail Implemented Backside Power Distribution Network Semiconductor Architecture and Method of Manufacturing the Same
SAMSUNG ELECTRONICS CO., Ltd.
0 cites - US117697282023Backside Power Distribution Network Semiconductor Package and Method of Manufacturing the Same
SAMSUNG ELECTRONICS CO., Ltd.
0 cites