Patents/Inventors

Ruilong Xie

Niskayuna, NYUS246 patents

404 Patents

US126222572026
Backside Local Interconnect
International Business Machines Corporation
0 cites
US126222602026
Bottom Contact Jumpers for Stacked Field Effect Transistor Semiconductors
International Business Machines Corporation
0 cites
US126222612026
Flexible Trackplan for Power Delivery
International Business Machines Corporation
0 cites
US126204262026
Deterministic Voltage-controlled Magnetic Anisotropy (VCMA) MRAM with Spin-transfer Torque (STT) MRAM Assistance
International Business Machines Corporation
0 cites
US126220212026
Semiconductor Structure with Conductive Spacer in Shallow Trench Isolation Region
International Business Machines Corporation
0 cites
US126220372026
Gate Cut Subsequent to Replacement Gate
International Business Machines Corporation
0 cites
US126220532026
Hybrid CMOS with Fin and Nanosheet Architectures
International Business Machines Corporation
0 cites
US126221812026
Phase Change Memory
International Business Machines Corporation
0 cites
US126222522026
Backside Contacts for Source/drain Regions
International Business Machines Corporation
0 cites
US126158122026
Stacked Field-effect Transistors
International Business Machines Corporation
0 cites
US126158192026
Space Confined Epi for Stacked FET
International Business Machines Corporation
0 cites
US126158172026
Stacked FET with Low Parasitic-capacitance Gate
International Business Machines Corporation
0 cites
US126160192026
Via Connection to Backside Power Delivery Network
International Business Machines Corporation
0 cites
US126158412026
Forksheet Transistor with Advanced Cell Height Scaling
International Business Machines Corporation
0 cites
US126158322026
Self-aligned Backside Contact Structure for Semiconductor Device Power Delivery
International Business Machines Corporation
0 cites
US126158162026
Flexible Self-aligned Power via Shape with Gate Cut First
International Business Machines Corporation
0 cites
US126106132026
Nanosheet Device with Vertical Blocker Fin
International Business Machines Corporation
0 cites
US126107532026
Stacked Resistive Random-access Memory Cross-point Cell
International Business Machines Corporation
0 cites
US126105132026
SRAM with Improved Program and Sensing Margin for Scaled Nanosheet Devices
International Business Machines Corporation
0 cites
US126107502026
Bridge Cell Phase Change Memory
International Business Machines Corporation
0 cites
US126045102026
Contact Jumper for Non-self Aligned Contact Devices
International Business Machines Corporation
0 cites
US126046742026
Back Side Phase Change Memory (PCM) with PCM Back Side Source/drain Contact Structure
International Business Machines Corporation
0 cites
US126047162026
Interconnect with Two-dimensional Free Zero Line End Enclosure
International Business Machines Corporation
0 cites
US126044962026
Epitaxy Everywhere Based Self-aligned Direct Backside Contact
International Business Machines Corporation
0 cites
US125989802026
Front End of Line Processing Compatible Thermally Stable Buried Power Rails
International Business Machines Corporation
0 cites
US125987592026
High-density Metal-insulator-metal Capacitor Integration Wth Nanosheet Stack Technology
International Business Machines Corporation
0 cites
US125987892026
Self-aligned Backside Contact
International Business Machines Corporation
0 cites
US125987762026
Nanosheet Epitaxy with Full Bottom Isolation
International Business Machines Corporation
0 cites
US125935012026
Stacked Fork Sheet Devices
International Business Machines Corporation
0 cites
US125934572026
Multi-state Ferroelectric-ram with Stacked Capacitors
International Business Machines Corporation
0 cites
US125934682026
Self-aligned Backside Contact with Increased Contact Area
International Business Machines Corporation
0 cites
US125882802026
Backsides Subtractive M1 Patterning with Backside Contact Repair for Tight N2P Space
International Business Machines Corporation
0 cites
US125882652026
Semiconductor Structure with Enhanced Placeholder Position Margin
International Business Machines Corporation
0 cites
US125882662026
CMOS Integration for Doped Placeholder as Direct Backside Contact
International Business Machines Corporation
0 cites
US125882732026
Stacked Electronic Devices Having Independent Gates
International Business Machines Corporation
0 cites
US125882772026
Forming Wrap Around Contact with Self-aligned Backside Contact
INTERNATIONAL BUSINESS MACHINES CORPORATION
0 cites
US125884842026
Backside Diffusion Break
International Business Machines Corporation
0 cites
US125884872026
Tight Pitch Directional Selective via Growth
International Business Machines Corporation
0 cites
US125817232026
Backside Power Via
International Business Machines Corporation
0 cites
US125753992026
Interconnect Structure Including Vertically Stacked Power and Ground Lines
International Business Machines Corporation
0 cites
US125754002026
Power Planes and Pass-through Vias
International Business Machines Corporation
0 cites
US125751602026
Backside and Frontside Contacts for Semiconductor Device
International Business Machines Corporation
0 cites
US125751402026
Diffusion Break Structure for Transistors
International Business Machines Corporation
0 cites
US125751452026
Monolithic Stacked Field Effect Transistor (SFET) with Dual Middle Dielectric Isolation (MDI) Separation
International Business Machines Corporation
0 cites
US125751572026
Nanosheet with Dual Isolation Regions Separated by Buried Inner Spacer
International Business Machines Corporation
0 cites
US125686832026
Single Stack Dual Channel Gate-all-around Nanosheet with Strained PFET and Bottom Dielectric Isolation NFET
International Business Machines Corporation
0 cites
US125688022026
Single Diffusion Cut for Gate Structures
GLOBALFOUNDRIES U.S. Inc.
0 cites
US125688142026
Buried Power Rail Directly Contacting Backside Power Delivery Network
International Business Machines Corporation
0 cites
US125686452026
Vertical Field Effect Transistor with Self-aligned Backside Trench Epitaxy
International Business Machines Corporation
0 cites
US125686502026
Profile Engineering for Deep Trenches in a Semiconductor Device
International Business Machines Corporation
0 cites
US125686612026
Self-aligned Backside Trench Epitaxy for Low Contact Resistivity
International Business Machines Corporation
0 cites
US125686692026
Placeholder Profile Formation for Backside Contact
International Business Machines Corporation
0 cites
US125637962026
Extended Lower Source/drain for Stacked Field-effect Transistor
International Business Machines Corporation
0 cites
US125638172026
Integrating Gate-cuts and Single Diffusion Break Isolation Post-rmg Using Low-temperature Protective Liners
International Business Machines Corporation
0 cites
US125639722026
Magnetic Tunnel Junction Pillar Formation for MRAM Device
International Business Machines Corporation
0 cites
US125622252026
Hybrid Memory for Neuromorphic Applications
International Business Machines Corporation
0 cites
US125637152026
Stacked Random-access-memory with Complementary Adjacent Cells
International Business Machines Corporation
0 cites
US125637472026
Three Dimensional Reram Device
International Business Machines Corporation
0 cites
US125637762026
Forming Source/drain Contact in a Tight Tip-to-tip Space
International Business Machines Corporation
0 cites
US125573562026
Semiconductor Structure with Fully Wrapped-around Backside Contact
International Business Machines Corporation
0 cites
US125572602026
Stacked-fet SRAM Cell with Bottom Pfet
INTERNATIONAL BUSINESS MACHINES CORPORATION
0 cites
US125572952026
Embedded Reram with Backside Contact
International Business Machines Corporation
0 cites
US125572982026
Resistive Random Access Memory on a Buried Bitline
International Business Machines Corporation
0 cites
US125573202026
FVBP Without Backside Si Recess
International Business Machines Corporation
0 cites
US125573282026
Vertical-transport Field-effect Transistor with Backside Source/drain Connections
International Business Machines Corporation
0 cites
US125573382026
Semiconductor Structure Having a Backside Contact with Backside Sidewall Spacers
International Business Machines Corporation
0 cites
US125573412026
Negative Capacitance Gate-all-around Transistor with Tunable Capacitance Ratio
International Business Machines Corporation
0 cites
US125573532026
Method and Structure for a Logic Device and Another Device
International Business Machines Corporation
0 cites
US125573542026
Vertical Field-effect Transistor (FET) Stacked Over Horizontal FET
International Business Machines Corporation
0 cites
US125573592026
Self-aligned Backside Contact with Protruding Source/drain
International Business Machines Corporation
0 cites
US125576262026
Self-aligned Backside Contact with Deep Trench Last Flow
International Business Machines Corporation
0 cites
US125576272026
Stacked FET with Bottom Epi Size Control and Wraparound Backside Contact
INTERNATIONAL BUSINESS MACHINES CORPORATION
0 cites
US125576332026
Multiple Critical Dimension Power Rail
International Business Machines Corporation
0 cites
US125576352026
Hybrid Power Rail Formation in Dielectric Isolation for Semiconductor Device
International Business Machines Corporation
0 cites
US125576372026
Stacked Transistors with Metal Vias
International Business Machines Corporation
0 cites
US125507852026
Separated Input/output (I/O) and Shared Power Terminals for a Carrier Wafer with a Built-in Device for Bonding with Another Device Wafer
International Business Machines Corporation
0 cites
US125506202026
Top Electrode to Metal Line Connection for Magneto-resistive Random-access Memory Stack Height Reduction
International Business Machines Corporation
0 cites
US125507122026
Bulk Substrate Backside Power Rail
0 cites
US125507132026
Hybrid Buried Power Rail Structure with Dual Front Side and Backside Processing
International Business Machines Corporation
0 cites
US125507142026
Late Middle-of-line Gate Cut with Power Bar Formation
INTERNATIONAL BUSINESS MACHINES CORPORATION
0 cites
US125507152026
Heterogeneous Integration of Device Die Having BSPDN
International Business Machines Corporation
0 cites
US125507192026
VTFET Circuit with Optimized Output
International Business Machines Corporation
0 cites
US125503382026
Three Dimensional Cross-point Non-volatile Memory
International Business Machines Corporation
0 cites
US125503512026
Diffusion Break Between Passive Device and Logic Device with Backside Contact
International Business Machines Corporation
0 cites
US125503712026
Separate Gate Complementary Field-effect Transistor
International Business Machines Corporation
0 cites
US125503762026
Work Function Metal Patterning and Middle-of-line Self-aligned Contacts for Nanosheet Technology
International Business Machines Corporation
0 cites
US125503902026
Trench Isolation for Backside Contact Formation
International Business Machines Corporation
0 cites
US125504202026
Top Contact Structures for Stacked Transistors
International Business Machines Corporation
0 cites
US125504212026
VTFET with Reduced Parasitic Capacitance
International Business Machines Corporation
0 cites
US125504272026
Vertical Inverter Formation on Stacked Field Effect Transistor (SFET)
International Business Machines Corporation
0 cites
US125435542026
Stacked Field Effect Transistor Contacts
International Business Machines Corporation
0 cites
US125435442026
Backside Direct Contact Formation
International Business Machines Corporation
0 cites
US125433582026
Transition Metal Dichalcogenide (TMD) Transistor Structure
International Business Machines Corporation
0 cites
US125385652026
Self-aligned Bottom Spacer
International Business Machines Corporation
0 cites
US125385532026
Contact Structure for Power Delivery on Semiconductor Device
International Business Machines Corporation
0 cites
US125387862026
Backside Contact for Semiconductor Device
International Business Machines Corporation
0 cites
US125139852025
CFET with Independent Gate Control and Low Parasitic Capacitance
International Business Machines Corporation
0 cites
US125060802025
Reduced Capacitance Between Power via Bar and Gates
INTERNATIONAL BUSINESS MACHINES CORPORATION
0 cites
US125074372025
Direct Backside Self-aligned Contact
International Business Machines Corporation
0 cites
US125060492025
Transistors with Backside Source/drain Contact and Spacer
International Business Machines Corporation
0 cites
US125016982025
Stacked Transistors Having Self Aligned Backside Contact with Backside Replacement Metal Gate
International Business Machines Corporation
0 cites
US125001442025
Backside Self Aligned Skip Via
International Business Machines Corporation
0 cites
US125001832025
Support Dielectric Fin to Prevent Gate Flop-over in Nanosheet Transistors
INTERNATIONAL BUSINESS MACHINES CORPORATION
0 cites
US124944282025
Airgap Spacer for Power Via
INTERNATIONAL BUSINESS MACHINES CORPORATION
0 cites
US124955872025
Self-aligned Contact (SAC) in Nanosheet Transistors
International Business Machines Corporation
0 cites
US124905072025
Different Dimensions Across Active Region for Stronger via to Backside Power Rail
INTERNATIONAL BUSINESS MACHINES CORPORATION
0 cites
US124905112025
Stacked Complementary Field Effect Transistors
International Business Machines Corporation
0 cites
US124904802025
Stacked FETS with Contact Placeholder Structures
International Business Machines Corporation
0 cites
US124904652025
Stacked Field Effect Transistor
International Business Machines Corporation
0 cites
US124890532025
Interconnect Structure Including Patterned Metal Lines
International Business Machines Corporation
0 cites
US124890352025
Semiconductor Passive Device Integration for Silicon-on-insulator Substrate
International Business Machines Corporation
0 cites
US124842482025
Source/drain Contact at Tight Cell Boundary
International Business Machines Corporation
0 cites
US124827422025
Enhanced Linerless Vias
International Business Machines Corporation
0 cites
US124842652025
Subtractive Source Drain Contact for Stacked Devices
INTERNATIONAL BUSINESS MACHINES CORPORATION
0 cites
US124842972025
Forksheet Transistor with Dual Depth Late Cell Boundary Cut
International Business Machines Corporation
0 cites
US124842622025
Tunnel Field Effect Transistor Devices
International Business Machines Corporation
0 cites
US124842962025
Fork Sheet Device with Wrapped Source and Drain Contact to Prevent NFET to PFET Contact Shortage in a Tight Space
International Business Machines Corporation
0 cites
US124761362025
Liner-less via Contact
International Business Machines Corporation
0 cites
US124778192025
Stacked FET with Extremely Small Cell Height
International Business Machines Corporation
0 cites
US124777792025
Gate-all-around Field-effect-transistor with Wrap-around-channel Inner Spacer
INTERNATIONAL BUSINESS MACHINES CORPORATION
0 cites
US124697852025
Backside Power Rail with Tight Space
International Business Machines Corporation
0 cites
US124713642025
Hybrid Stacked Field Effect Transistors
International Business Machines Corporation
0 cites
US124631302025
Wrap Around Metal via Structure
International Business Machines Corporation
0 cites
US124631282025
Interconnect Structures with Vias Having Vertical and Horizontal Sections
International Business Machines Corporation
0 cites
US124631322025
Semiconductor Structure with Backside Metallization Layers
International Business Machines Corporation
0 cites
US124647962025
Gate Induced Drain Leakage Reduction in Finfets
INTERNATIONAL BUSINESS MACHINES CORPORATION
0 cites
US124648132025
Semiconductor Device Having Hybrid Middle of Line Contacts
International Business Machines Corporation
0 cites
US124577802025
Semiconductor Device with Void Under Source/drain Region for Backside Contact
International Business Machines Corporation
0 cites
US124577622025
Cross Bar Vertical Fets
International Business Machines Corporation
0 cites
US124577932025
Vertical Transport Field Effect Transistor (VTFET) with Backside Wraparound Contact
International Business Machines Corporation
0 cites
US124531762025
Heterogeneous Gate All Around Dielectric Thickness
International Business Machines Corporation
0 cites
US124531462025
Epi Growth Uniformity with Source/drain Placeholder
International Business Machines Corporation
0 cites
US124514312025
Stacked Semiconductor Devices with Topside and Backside Interconnect Wiring
International Business Machines Corporation
0 cites
US124514122025
Backside Gate via Structure Using Self-aligned Scheme
International Business Machines Corporation
0 cites
US124532962025
Phase-change Memory Device with Conductive Cladding
International Business Machines Corporation
0 cites
US124462902025
Asymmetric Gate Extension in Stacked FET
International Business Machines Corporation
0 cites
US124462932025
Methods, Apparatus, and Manufacturing System for Self-aligned Patterning of a Vertical Transistor
Globalfoundries U.S. Inc.
0 cites
US124446532025
Buried Power Rail at Tight Cell-to-cell Space
INTERNATIONAL BUSINESS MACHINES CORPORATION
0 cites
US124462322025
Mram-based Chip Identification with Free Random Programming
International Business Machines Corporation
0 cites
US124396332025
VTFET with Controlled Fin Height
International Business Machines Corporation
0 cites
US124396082025
MRAM Integration with Self-aligned Direct Back Side Contact
International Business Machines Corporation
0 cites
US124380852025
Via to Backside Power Rail Through Active Region
INTERNATIONAL BUSINESS MACHINES CORPORATION
0 cites
US124380342025
Narrowing Single Diffusion Break
International Business Machines Corporation
0 cites
US124396722025
Semiconductor Backside Contact Structure with Increased Contact Area
International Business Machines Corporation
0 cites
US124396602025
Vertical Transistor with Reduced Cell Height
International Business Machines Corporation
0 cites
US124396312025
Non-self-aligned Wrap-around Contact in a Tight Gate Pitched Transistor
International Business Machines Corporation
0 cites
US124314082025
TSV and Backside Power Distribution Structure
International Business Machines Corporation
0 cites
US124329682025
Nanowire Source/drain Formation for Nanosheet Device
International Business Machines Corporation
0 cites
US124329602025
Wraparound Contact with Reduced Distance to Channel
International Business Machines Corporation
0 cites
US124263382025
Buried Power Rail with Robust Connection to a Wrap Around Contact
International Business Machines Corporation
0 cites
US124245392025
Local Enlarged Via-to-backside Power Rail
International Business Machines Corporation
0 cites
US124245492025
Skip-level TSV with Hybrid Dielectric Scheme for Backside Power Delivery
International Business Machines Corporation
0 cites
US124245572025
Dual Structured Buried Rail
International Business Machines Corporation
0 cites
US124245912025
Method and Structure of Forming Independent Contact for Staggered CFET
International Business Machines Corporation
0 cites
US124263142025
Strain Generation and Anchoring in Gate-all-around Field Effect Transistors
International Business Machines Corporation
0 cites
US124190792025
Field Effect Transistor with Backside Source/drain
International Business Machines Corporation
0 cites
US124190802025
Semiconductor Structure with Wrapped-around Backside Contact
International Business Machines Corporation
0 cites
US124179442025
Formation of Trench Silicide Source or Drain Contacts Without Gate Damage
International Business Machines Corporation
0 cites
US124179632025
Isolation Rail Between Backside Power Rails
International Business Machines Corporation
0 cites
US124179742025
Decoupling Capacitance in Backside Interconnect
International Business Machines Corporation
0 cites
US124179792025
Pass-through Wiring in Notched Interconnect
International Business Machines Corporation
0 cites
US124190242025
High Density Static Random-access Memory
International Business Machines Corporation
0 cites
US124128292025
Method and Structure of Forming Sidewall Contact for Stacked FET
0 cites
US124143362025
Semiconductor Structure Having Stacked Power Rails
International Business Machines Corporation
0 cites
US124143282025
Co-integrating Gate-all-around Nanosheet Transistors and Comb-nanosheet Transistors
International Business Machines Corporation
0 cites
US124128362025
Backside Power Plane
International Business Machines Corporation
0 cites
US124128302025
Semiconductor Device with Power Via
International Business Machines Corporation
0 cites
US124069302025
Structure Containing a Via-to-buried Power Rail Contact Structure or a Via-to-backside Power Rail Contact Structure
International Business Machines Corporation
0 cites
US124009602025
Vertical-transport Field-effect Transistor with Backside Gate Contact
International Business Machines Corporation
0 cites
US124024082025
Stacked FETS Including Devices with Thick Gate Oxide
International Business Machines Corporation
0 cites
US124025452025
Stacked Cross-point Phase Change Memory
International Business Machines Corporation
0 cites
US124023422025
Nanosheet Device with T-shaped Dual Inner Spacer
INTERNATIONAL BUSINESS MACHINES CORPORATION
0 cites
US123962472025
Work Function Metal Patterning for Nanosheet Cfets
INTERNATIONAL BUSINESS MACHINES CORPORATION
0 cites
US123962272025
Full Wrap Around Backside Contact
INTERNATIONAL BUSINESS MACHINES CORPORATION
0 cites
US123962252025
Method to Release Nano Sheet After Nano Sheet Fin Recess
International Business Machines Corporation
0 cites
US123946602025
Buried Power Rail After Replacement Metal Gate
International Business Machines Corporation
0 cites
US123944622025
Stacked FET with Three-terminal SOT MRAM
International Business Machines Corporation
0 cites
US123898132025
Resistive Switching Memory Cell
International Business Machines Corporation
0 cites
US123896092025
Circuit Architecture Using Transistors with Dynamic Dual Functionality for Logic and Embedded Memory Drivers
International Business Machines Corporation
0 cites
US123827192025
Power Gating Dummy Power Transistors for Back Side Power Delivery Networks
International Business Machines Corporation
0 cites
US123826622025
Wrap-around-contact for 2d-channel Gate-all-around Field-effect-transistors
International Business Machines Corporation
0 cites
US123826652025
Increased Gate Length at Given Footprint for Nanosheet Device
International Business Machines Corporation
0 cites
US123826822025
Gate-all-around Nanosheet-fet with Variable Channel Geometries for Performance Optimization
International Business Machines Corporation
0 cites
US123827082025
Vertical Stacked Nanosheet CMOS Transistors with Different Work Function Metals
International Business Machines Corporation
0 cites
US123639772025
Forming Dielectric Sidewall and Bottom Dielectric Isolation in Fork-fet Devices
International Business Machines Corporation
0 cites
US123620042025
Scaled 2T DRAM
International Business Machines Corporation
0 cites
US123622782025
Transistors with Dual Power and Signal Lines
International Business Machines Corporation
0 cites
US123639652025
Stacked Transistor Layout for Improved Cell Height Scaling
International Business Machines Corporation
0 cites
US123639902025
Upper and Lower Gate Configurations of Monolithic Stacked Finfet Transistors
International Business Machines Corporation
0 cites
US123567092025
Vertical Field-effect Transistor with Isolation Pillars
International Business Machines Corporation
0 cites
US123566802025
Nanosheet Device with Air-gaped Source/drain Regions
International Business Machines Corporation
0 cites
US123566852025
Looped Long Channel Field-effect Transistor
International Business Machines Corporation
0 cites
US123567112025
Late Gate Extension
International Business Machines Corporation
0 cites
US123494572025
Stacked Transistors Having Bottom Contact with Replacement Spacer
International Business Machines Corporation
0 cites
US123494062025
Hybrid Gate Cut for Stacked Transistors
INTERNATIONAL BUSINESS MACHINES CORPORATION
0 cites
US123477672025
Stacked FET Contact Formation
INTERNATIONAL BUSINESS MACHINES CORPORATION
0 cites
US123410992025
Semiconductor Backside Transistor Integration with Backside Power Delivery Network
International Business Machines Corporation
0 cites
US123410662025
Advanced Metal Interconnect
International Business Machines Corporation
0 cites
US123425782025
Stacked Layer Memory Suitable for SRAM and Having a Long Cell
International Business Machines Corporation
0 cites
US123362792025
Fin Stack Including Tensile-strained and Compressively Strained Fin Portions
International Business Machines Corporation
0 cites
US123344422025
Dielectric Caps for Power and Signal Line Routing
International Business Machines Corporation
0 cites
US123362942025
Gate-cut and Separation Techniques for Enabling Independent Gate Control of Stacked Transistors
International Business Machines Corporation
0 cites
US123288592025
Stacked FET SRAM
International Business Machines Corporation
0 cites
US123289162025
Cpp-agnostic Source-drain Contact Formation for Gate-all-around Devices with Dielectric Isolation
INTERNATIONAL BUSINESS MACHINES CORPORATION
0 cites
US123241972025
Spin-based Gate-all-around Transistors
INTERNATIONAL BUSINESS MACHINES CORPORATION
0 cites
US123241842025
Replacement Gate Cross-couple for Static Random-access Memory Scaling
INTERNATIONAL BUSINESS MACHINES CORPORATION
0 cites
US123226522025
Local Interconnect for Cross Coupling
International Business Machines Corporation
0 cites
US123242342025
Fork Sheet Device with Better Electrostatic Control
International Business Machines Corporation
0 cites
US123242372025
Diffusion-break Region in Stacked-fet Integrated Circuit Device
International Business Machines Corporation
0 cites
US123242072025
Channel Protection of Gate-all-around Devices for Performance Optimization
International Business Machines Corporation
0 cites
US123175142025
Resistive Random-access Memory Structures with Stacked Transistors
International Business Machines Corporation
0 cites
US123177622025
Vertical Phase Change Memory Device
International Business Machines Corporation
0 cites
US123177632025
Memory Cell with Comb-shaped Electrodes
International Business Machines Corporation
0 cites
US123175092025
Stacked Spin-orbit-torque Magnetoresistive Random-access Memory
International Business Machines Corporation
0 cites
US123175372025
Reduced Parasitic Capacitance Semiconductor Device Containing at Least One Local Interconnect Passthrough Structure
International Business Machines Corporation
0 cites
US123100902025
CMOS Top Source/drain Region Doping and Epitaxial Growth for a Vertical Field Effect Transistor
International Business Machines Corporation
0 cites
US123100542025
Late Replacement Bottom Isolation for Nanosheet Devices
International Business Machines Corporation
0 cites
US123100612025
Nanosheet Transistor Devices with Different Active Channel Widths
International Business Machines Corporation
0 cites
US123100642025
Isolation Pillar Structures for Stacked Device Structures
International Business Machines Corporation
0 cites
US123006172025
Self-aligned Buried Power Rail Cap for Semiconductor Devices
International Business Machines Corporation
0 cites
US122951332025
SRAM with Backside Cross-couple
International Business Machines Corporation
0 cites
US122782372025
Stacked FETS with Non-shared Work Function Metals
International Business Machines Corporation
0 cites
US122741862025
Low Current Phase-change Memory Device
International Business Machines Corporation
0 cites
US122741852025
Phase Change Memory Cell Having Pillar Bottom Electrode with Improved Thermal Insulation
International Business Machines Corporation
0 cites
US122726482025
Semiconductor Device Having a Backside Power Rail
International Business Machines Corporation
0 cites
US122740892025
Stacked FET Sidewall Strap Connections Between Gates
International Business Machines Corporation
0 cites
US122680162025
Buried Power Rail Formation for Vertical Field Effect Transistors
International Business Machines Corporation
0 cites
US122680312025
Backside Power Rails and Power Distribution Network for Density Scaling
International Business Machines Corporation
0 cites
US122666052025
Top via Interconnects with Line Wiggling Prevention
International Business Machines Corporation
0 cites
US122680302025
Self-aligned C-shaped Vertical Field Effect Transistor
International Business Machines Corporation
0 cites
US122625522025
Source/drain Epitaxy Process in Stacked FET
International Business Machines Corporation
0 cites
US122566532025
PCM Cell with Nanoheater Surrounded with Airgaps
International Business Machines Corporation
0 cites
US122556512025
Reconfigurable Ring Oscillator (RO) Physical Unclonable Function (PUF)
INTERNATIONAL BUSINESS MACHINES CORPORATION
0 cites
US122565542025
Embedded MRAM Integrated with Super via and Dummy Fill
International Business Machines Corporation
0 cites
US122552042025
Vertical FET Replacement Gate Formation with Variable Fin Pitch
INTERNATIONAL BUSINESS MACHINES CORPORATION
0 cites
US122496432025
Stacked Planar Field Effect Transistors with 2D Material Channels
INTERNATIONAL BUSINESS MACHINES CORPORATION
0 cites
US122455172025
MRAM Stack with Reduced Height
INTERNATIONAL BUSINESS MACHINES CORPORATION
0 cites
US122439132025
Self-aligned Backside Contact Integration for Transistors
International Business Machines Corporation
0 cites
US122455302025
Phase Change Memory with Concentric Ring-shaped Heater
International Business Machines Corporation
0 cites
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