73 Patents
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- US126222602026Bottom Contact Jumpers for Stacked Field Effect Transistor Semiconductors
International Business Machines Corporation
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- US126047162026Interconnect with Two-dimensional Free Zero Line End Enclosure
International Business Machines Corporation
0 cites - US125989702026Top via on Subtractively Etched Conductive Line
INTERNATIONAL BUSINESS MACHINES CORPORATION
0 cites - US125989832026Interconnects Formed Using Integrated Damascene and Subtractive Etch Processing
International Business Machines Corporation
0 cites - US125882802026Backsides Subtractive M1 Patterning with Backside Contact Repair for Tight N2P Space
International Business Machines Corporation
0 cites - US125884872026Tight Pitch Directional Selective via Growth
International Business Machines Corporation
0 cites - US125882772026Forming Wrap Around Contact with Self-aligned Backside Contact
INTERNATIONAL BUSINESS MACHINES CORPORATION
0 cites - US125753992026Interconnect Structure Including Vertically Stacked Power and Ground Lines
International Business Machines Corporation
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- US125686452026Vertical Field Effect Transistor with Self-aligned Backside Trench Epitaxy
International Business Machines Corporation
0 cites - US125688062026Conformal Dielectric Cap for Subtractive Vias
International Business Machines Corporation
0 cites - US125572982026Resistive Random Access Memory on a Buried Bitline
International Business Machines Corporation
0 cites - US125573282026Vertical-transport Field-effect Transistor with Backside Source/drain Connections
International Business Machines Corporation
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- US125507132026Hybrid Buried Power Rail Structure with Dual Front Side and Backside Processing
International Business Machines Corporation
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- US125385532026Contact Structure for Power Delivery on Semiconductor Device
International Business Machines Corporation
0 cites - US125060802025Reduced Capacitance Between Power via Bar and Gates
INTERNATIONAL BUSINESS MACHINES CORPORATION
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- US124842482025Source/drain Contact at Tight Cell Boundary
International Business Machines Corporation
0 cites - US124827462025Early Backside First Power Delivery Network
International Business Machines Corporation
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- US124697772025BEOL Interconnect Subtractive Etch Super Via
International Business Machines Corporation
0 cites - US124631282025Interconnect Structures with Vias Having Vertical and Horizontal Sections
International Business Machines Corporation
0 cites - US124631322025Semiconductor Structure with Backside Metallization Layers
International Business Machines Corporation
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- US124577932025Vertical Transport Field Effect Transistor (VTFET) with Backside Wraparound Contact
International Business Machines Corporation
0 cites - US124514322025Multi-layer Topological Interconnect with Proximal Doping Layer
INTERNATIONAL BUSINESS MACHINES CORPORATION
0 cites - US124396082025MRAM Integration with Self-aligned Direct Back Side Contact
International Business Machines Corporation
0 cites - US124380772025Damascene Interconnect Spacer to Facilitate Gap Fill
International Business Machines Corporation
0 cites - US124245492025Skip-level TSV with Hybrid Dielectric Scheme for Backside Power Delivery
International Business Machines Corporation
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- US124179742025Decoupling Capacitance in Backside Interconnect
International Business Machines Corporation
0 cites - US124179632025Isolation Rail Between Backside Power Rails
International Business Machines Corporation
0 cites - US124179792025Pass-through Wiring in Notched Interconnect
International Business Machines Corporation
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- US124009602025Vertical-transport Field-effect Transistor with Backside Gate Contact
International Business Machines Corporation
0 cites - US123879372025Sam Formulations and Cleaning to Promote Quick Depositions
International Business Machines Corporation
0 cites - US123639652025Stacked Transistor Layout for Improved Cell Height Scaling
International Business Machines Corporation
0 cites - US123344422025Dielectric Caps for Power and Signal Line Routing
International Business Machines Corporation
0 cites - US122931402025Feed-forward Design of Three-dimensional Quantum Chips
INTERNATIONAL BUSINESS MACHINES CORPORATION
0 cites - US122663932025Negative Capacitance for Ferroelectric Capacitive Memory Cell
International Business Machines Corporation
0 cites - US122610562025Top via Patterning Using Metal as Hard Mask and via Conductor
INTERNATIONAL BUSINESS MACHINES CORPORATION
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- US121564862024Horizontal RRAM Device and Architecture for Variability Reduction
INTERNATIONAL BUSINESS MACHINES CORPORATION
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- US120403732024Liner-free Resistance Contacts and Silicide with Silicide Stop Layer
International Business Machines Corporation
0 cites - US119904102024Top via Interconnect Having a Line with a Reduced Bottom Dimension
INTERNATIONAL BUSINESS MACHINES CORPORATION
0 cites - US119617592024Interconnects Having Spacers for Improved Top via Critical Dimension and Overlay Tolerance
INTERNATIONAL BUSINESS MACHINES CORPORATION
0 cites - US119087382024Interconnect Including Integrally Formed Capacitor
International Business Machines Corporation
0 cites - US119087912024Partial Subtractive Supervia Enabling Hyper-scaling
INTERNATIONAL BUSINESS MACHINES CORPORATION
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- US118429612023Advanced Metal Interconnects with a Replacement Metal
International Business Machines Corporation
0 cites - US118239982023Top via with Next Level Line Selective Growth
International Business Machines Corporation
0 cites - US118044062023Top via Cut Fill Process for Line Extension Reduction
International Business Machines Corporation
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- US117568872023Backside Floating Metal for Increased Capacitance
International Business Machines Corporation
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- US117354752023Removal of Barrier and Liner Layers from a Bottom of a Via
International Business Machines Corporation
0 cites - US116826172023High Aspect Ratio Vias for Integrated Circuits
International Business Machines Corporation
0 cites - US116705422023Stepped Top via for via Resistance Reduction
International Business Machines Corporation
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