12 Patents
- US125883482026Method of Manufacturing a Effect Transistor Using Carbon Nanotubes and a Field Effect Transistor
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US123175862025Semiconductor Device Having Fin Structures with Unequal Channel Heights and Manufacturing Method Thereof
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US123005502025Complementary MOS FETS Vertically Arranged and Including Multiple Dielectric Layers Surrounding the MOS FETS
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - 0 cites
- US120108562024Method of Manufacturing a Field Effect Transistor Using Carbon Nanotubes and a Field Effect Transistor
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US119089222024Heterogeneous Semiconductor Device Substrates with High Quality Epitaxy
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - US118309472023Method of Manufacturing a Semiconductor Device and a Semiconductor Device
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US117842192023Method for Manufacturing Semiconductor Device with Spacer Layer
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US117282222023Complementary MOS FETS Vertically Arranged and Including Multiple Dielectric Layers Surrounding the MOS FETS
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US116825872023Semiconductor Device and Manufacturing Method Thereof
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - US116770042023Strained Channel Field Effect Transistor
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US116006162023Semiconductor Device Including Finfets Having Different Channel Heights
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites