Patents/Inventors

Kiseok Lee

Suwon-siKR56 patents

54 Patents

US126219832026
Semiconductor Device Including Vertical Channel Region
Samsung Electronics Co., Ltd.
0 cites
US126219972026
Semiconductor Devices
Samsung Electronics Co., Ltd.
0 cites
US126105232026
Semiconductor Memory Devices
Samsung Electronics Co., Ltd.
0 cites
US126105612026
Method for Fabricating a Semiconductor Device Having Back Gate Electrodes, Active Layers, and Data Lines
SAMSUNG ELECTRONICS CO., Ltd.
0 cites
US125881922026
Semiconductor Device
SAMSUNG ELECTRONICS CO., Ltd.
0 cites
US125433202026
Semiconductor Memory Device
SAMSUNG ELECTRONICS CO., Ltd.
0 cites
US125384772026
Semiconductor Memory Device
SAMSUNG ELECTRONICS CO., Ltd.
0 cites
US125324582026
Semiconductor Memory Device
Samsung Electronics Co., Ltd.
0 cites
US125324492026
Semiconductor Memory Device and Method of Manufacturing the Same
Samsung Electronics Co., Ltd.
0 cites
US125073942025
Semiconductor Devices
SAMSUNG ELECTRONICS CO., Ltd.
0 cites
US125016102025
Semiconductor Memory Device
Samsung Electronics Co., Ltd.
0 cites
US125016072025
Semiconductor Memory Device
SAMSUNG ELECTRONICS CO., Ltd.
0 cites
US124890562025
Semiconductor Device Having an Upper End of a Lower Spacer Structure on a Level Same as or Lower Than a Lower End of a Storage Node Contact
Samsung Electronics Co., Ltd.
0 cites
US124842132025
Semiconductor Device
SAMSUNG ELECTRONICS CO., Ltd.
0 cites
US124777282025
Semiconductor Memory Device and Method of Manufacture
Samsung Electronics Co., Ltd.
0 cites
US124712692025
Semiconductor Device
SAMSUNG ELECTRONICS CO., Ltd.
0 cites
US124647702025
Semiconductor Devices Having Vertical Channel Transistor Structures and Methods of Fabricating the Same
Samsung Electronics Co., Ltd.
0 cites
US124530822025
Semiconductor Device Having a Cell Separation Pattern in Contact with the Bit Line Contact
SAMSUNG ELECTRONICS CO., Ltd.
0 cites
US124395872025
Semiconductor Device Having an Air Gap Surrounding a Portion of a Conductive Contact Layer
Samsung Electronics Co., Ltd.
0 cites
US124262592025
Integrated Circuit Device
Samsung Electronics Co., Ltd.
0 cites
US124263402025
Semiconductor Memory Device
SAMSUNG ELECTRONICS CO., Ltd.
0 cites
US124262442025
Semiconductor Memory Device
SAMSUNG ELECTRONICS CO., Ltd.
0 cites
US124262432025
Semiconductor Memory Device and Method of Fabricating the Same
SAMSUNG ELECTRONICS CO., Ltd.
0 cites
US124190422025
Integrated Circuit Device
SAMSUNG ELECTRONICS CO., Ltd.
0 cites
US124190492025
Semiconductor Memory Device Including Symmetrical Channel Patterns and Wordlines
SAMSUNG ELECTRONICS CO., Ltd.
0 cites
US123946402025
Apparatus for Cleaning Wafer
SAMSUNG ELECTRONICS CO., Ltd.
0 cites
US123007302025
Semiconductor Devices Having Supporter Structures
Samsung Electronics Co., Ltd.
0 cites
US123025512025
Semiconductor Memory Device and Method of Fabricating the Same
SAMSUNG ELECTRONICS CO., Ltd.
0 cites
US121661322024
Semiconductor Device
Samsung Electronics Co., Ltd.
0 cites
US120742682024
Transparent Light-emitting Device Display
LG CHEM, Ltd.
0 cites
US120756112024
Semiconductor Memory Device
SAMSUNG ELECTRONICS CO., Ltd.
0 cites
US120528552024
Semiconductor Memory Device
Samsung Electronics Co., Ltd.
0 cites
US120481412024
Semiconductor Memory Device and a Method of Fabricating the Same
SAMSUNG ELECTRONICS CO., Ltd.
0 cites
US120150642024
Semiconductor Devices Having Supporter Structures
Samsung Electronics Co., Ltd.
0 cites
US119800252024
Semiconductor Device Including Carbon-containing Contact Fence
Samsung Electronics Co., Ltd.
0 cites
US119178152024
Semiconductor and Manufacturing Method of the Same
SAMSUNG ELECTRONICS CO., Ltd.
0 cites
US119087972024
Integrated Circuit Device Having a Bit Line and a Main Insulating Spacer with an Extended Portion
Samsung Electronics Co., Ltd.
0 cites
US118442122023
Semiconductor Memory Devices
Samsung Electronics Co., Ltd.
0 cites
US118125242023
Heating Film and Method for Manufacturing Same
LG CHEM, Ltd.
0 cites
US118056392023
Semiconductor Devices
Samsung Electronics Co., Ltd.
0 cites
US117709262023
Semiconductor Devices Including an Edge Insulating Layer
SAMSUNG ELECTRONICS CO., Ltd.
0 cites
US117659052023
Semiconductor Memory Device
SAMSUNG ELECTRONICS CO., Ltd.
0 cites
US117513782023
Semiconductor Memory Device
SAMSUNG ELECTRONICS CO., Ltd.
0 cites
US117168182023
Embedded-type Transparent Electrode Substrate and Method for Manufacturing Same
LG CHEM, Ltd.
0 cites
US116964342023
Semiconductor Memory Device
SAMSUNG ELECTRONICS CO., Ltd.
0 cites
US116476252023
Memory Device Having a Channel Provided on a Memory Unit
SAMSUNG ELECTRONICS CO., Ltd.
0 cites
US116476272023
Integrated Circuit Device
SAMSUNG ELECTRONICS CO., Ltd.
0 cites
US116160662023
Semiconductor Device and Manufacturing Method of the Same
SAMSUNG ELECTRONICS CO., Ltd.
0 cites
US116160652023
Semiconductor Memory Devices
Samsung Electronics Co., Ltd.
0 cites
US116005702023
Semiconductor Memory Device and Method of Fabricating the Same
SAMSUNG ELECTRONICS CO., Ltd.
0 cites
US115879292023
Semiconductor Memory Device
SAMSUNG ELECTRONICS CO., Ltd.
0 cites
US115692392023
Semiconductor Memory Devices
Samsung Electronics Co., Ltd.
0 cites
US115630052023
Three-dimensional Semiconductor Device with a Bit Line Perpendicular to a Substrate
SAMSUNG ELECTRONICS CO., Ltd.
0 cites
US115575962023
Semiconductor Memory Device
SAMSUNG ELECTRONICS CO., Ltd.
0 cites