17 Patents
- US125638272026Semiconductor Device Including a Field Effect Transistor and Method of Fabricating the Same
SAMSUNG ELECTRONICS CO., Ltd.
0 cites - US124330172025Integrated Circuit Device Including N-channel Metal-oxide Semiconductor (NMOS) Transistor Region and a P-channel Metal-oxide Semiconductor (PMOS) Transistor Region
SAMSUNG ELECTRONICS CO., Ltd.
0 cites - US124083912025Display Device Including a Sensing Layer for Sensing an External Input Device and Method of Drving the Same
Samsung Electronics Co., Ltd.
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- US120275232024Semiconductor Device Including a Field Effect Transistor and Method of Fabricating the Same
SAMSUNG ELECTRONICS CO., Ltd.
0 cites - US119619142024Integrated Circuit Devices and Methods of Manufacturing the Same
Samsung Electronics Co., Ltd.
0 cites - US118944632024Integrated Circuits and Methods of Manufacturing the Same
SAMSUNG ELECTRONICS CO., Ltd.
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- US116997592023Integrated Circuit Devices and Methods of Manufacturing the Same
Samsung Electronics Co., Ltd.
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- US115631212023Integrated Circuits and Methods of Manufacturing the Same
SAMSUNG ELECTRONICS CO., Ltd.
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