3 Patents
- US123362332025Gan-based Semiconductor Device with Reduced Leakage Current and Method for Manufacturing the Same
INNOSCIENCE (SUZHOU) SEMICONDUCTOR CO., Ltd.
0 cites - US118627212024HEMT Semiconductor Device with a Stepped Sidewall
INNOSCIENCE (SUZHOU) TECHNOLOGY CO., Ltd.
0 cites - US118548872023Nitride-based Semiconductor Devices with Recesses for Dicing and Methods of Fabricating the Same
INNOSCIENCE (ZHUHAI) TECHNOLOGY CO., Ltd.
0 cites