17 Patents
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- US125989782026Semiconductor Device Having a Source/drain Contact Connected to a Back-side Power Rail by a Landing Pad and a Through Electrode
SAMSUNG ELECTRONICS CO., Ltd.
0 cites - US125990402026Three-dimensional Integrated Circuit Structure and a Method of Fabricating the Same
SAMSUNG ELECTRONICS CO., Ltd.
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- US117283112023Semiconductor Devices Including Interposer Substrates Further Including Capacitors
Samsung Electronics Co., Ltd.
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