Patents/Inventors

Hung-chan Lin

TainanTW14 patents

15 Patents

US124649582025
Magnetoresistive Random Access Memory (MRAM) Device and Method of Forming the Same
United Microelectronics Corp.
0 cites
US124377902025
Semiconductor Structure and Manufacturing Method Thereof
UNITED MICROELECTRONICS Corp.
0 cites
US124398322025
Semiconductor Device and Method for Fabricating the Same
UNITED MICROELECTRONICS Corp.
0 cites
US123898082025
Semiconductor Device and Method for Fabricating the Same
UNITED MICROELECTRONICS Corp.
0 cites
US123694992025
Magnetoresistive Random Access Memory and Method of Manufacturing the Same
UNITED MICROELECTRONICS Corp.
0 cites
US123175122025
SOT MRAM Structure and Fabricating Method of the Same
UNITED MICROELECTRONICS Corp.
0 cites
US123102592025
Semiconductor Device and Method for Fabricating the Same
UNITED MICROELECTRONICS Corp.
0 cites
US122625442025
Magnetoresistive Random Access Memory and Method for Fabricating the Same
UNITED MICROELECTRONICS Corp.
0 cites
US122565562025
Magnetoresistive Random Access Memory and Method for Fabricating the Same
UNITED MICROELECTRONICS Corp.
0 cites
US121909262025
Layout Pattern of Magnetoresistive Random Access Memory
UNITED MICROELECTRONICS Corp.
0 cites
US120895082024
Semiconductor Device and Method for Fabricating the Same
UNITED MICROELECTRONICS Corp.
0 cites
US119689102024
Semiconductor Device and Method for Fabricating the Same
UNITED MICROELECTRONICS Corp.
0 cites
US119689112024
Semiconductor Device and Method for Fabricating the Same
UNITED MICROELECTRONICS Corp.
0 cites
US119569732024
Magnetoresistive Random Access Memory and Method for Fabricating the Same
UNITED MICROELECTRONICS Corp.
0 cites
US119440162024
Magnetoresistive Random Access Memory and Method of Manufacturing the Same
UNITED MICROELECTRONICS Corp.
0 cites