Patents/Inventors

Henry Chin

San Jose, CAUS26 patents

26 Patents

US126136392026
Techniques for Operating Hybrid Blocks in a Memory Device
Sandisk Technologies, Inc.
0 cites
US126081532026
Lower Vread for Erased Word Lines in Post-write Dummy Reads
Sandisk Technologies, Inc.
0 cites
US125866572026
Nonvolatile Memory with Temperature-dependent Sense Time Offsets for Soft-bit Read
Sandisk Technologies, Inc.
0 cites
US125866462026
Precharge Scheme During Programming of a Memory Device
Sandisk Technologies, Inc.
0 cites
US125866472026
Programming Techniques That Utilize Analog Bitscan in a Memory Device
Sandisk Technologies, Inc.
0 cites
US125622312026
Smart Verify Algorithm for Improving Reliability for Ultra High-performance 3D NAND
Sandisk Technologies, Inc.
0 cites
US125121342025
Nonvolatile Memory with Ongoing Program Read
Sandisk Technologies, Inc.
0 cites
US124999462025
Reliability Improvement Through Delay Between Multi-stage Programming Steps in Non-volatile Memory Structures
Sandisk Technologies, Inc.
0 cites
US124942452025
Word Line-dependent Word Line and Channel Read Setup Time in First Read State of Non-volatile Memory
Sandisk Technologies, Inc.
0 cites
US124888442025
Systems and Methods to Avoid Over Programming at Infrequent Smart Verify Acquisition for High-performance 3D NAND
Sandisk Technologies, Inc.
0 cites
US124512012025
Hybrid Precharge Select Scheme to Save Program ICC
Sandisk Technologies, Inc.
0 cites
US122056572025
Hybrid Smart Verify for QLC/TLC Die
Sandisk Technologies LLC
0 cites
US121546352024
Memory Programming Techniques to Reduce Power Consumption
Sanddisk Technologies LLC
0 cites
US120571612024
Memory Device with Unique Read And/or Programming Parameters
Sandisk Technologies LLC
0 cites
US120514672024
Programming of Memory Cells Using a Memory String Dependent Program Voltage
SANDISK TECHNOLOGIES LLC
0 cites
US119728102024
Read Pass Voltage Dependent Recovery Voltage Setting Between Program and Program Verify
Sandisk Technologies, LLC
0 cites
US119728042024
Techniques for Checking Vulnerability to Cross-temperature Read Errors in a Memory Device
Sandisk Technologies, LLC
0 cites
US119673822024
Mixing Normal and Reverse Order Programming in NAND Memory Devices
Sandisk Technologies, LLC
0 cites
US118940802024
Time-tagging Read Levels of Multiple Wordlines for Open Block Data Retention
SANDISK TECHNOLOGIES LLC
0 cites
US118940512024
Temperature-dependent Word Line Voltage and Discharge Rate for Refresh Read of Non-volatile Memory
SANDISK TECHNOLOGIES LLC
0 cites
US118546202023
Word Line Zoned Adaptive Initial Program Voltage for Non-volatile Memory
Sandisk Technologies LLC
0 cites
US117052032023
Digital Temperature Compensation Filtering
Sandisk Technologies LLC
0 cites
US116460812023
Reliability Compensation for Uneven NAND Block Degradation
Sandisk Technologies LLC
0 cites
US116360392023
Mapping for Multi-state Programming of Memory Devices
Western Digital Technologies, Inc.
0 cites
US116368972023
Peak Current and Program Time Optimization Through Loop Dependent Voltage Ramp Target and Timing Control
Sandisk Technologies LLC
0 cites
US116054362023
Countermeasure Modes to Address Neighbor Plane Disturb Condition in Non-volatile Memory Structures
Sandisk Technologies LLC
0 cites