Patents/Inventors

Fu-cheng Chang

Tainan CityTW17 patents

15 Patents

US125935232026
Image Sensor Device with Light Blocking Structure and Adhesion Layer Embedded in Oxide Layer
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites
US125754642026
Method of Forming Wafer-to-wafer Bonding Structure
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites
US124578162025
Wide Channel Semiconductor Device
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites
US123764172025
Semiconductor Device with Nanostructures
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites
US122437722025
Protection Structures for Bonded Wafers
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites
US121258642024
Image Sensor and Method of Making
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites
US121071042024
Backside Refraction Layer for Backside Illuminated Image Sensor and Methods of Forming the Same
Taiwan Semiconductor Manufacturing Company Limited
0 cites
US119013052024
Method for Fabricating Semiconductor Structure Having Alignment Mark Feature
TAIWAN SEMICONDUCTOR MANUFACTURING Co. Ltd.
0 cites
US117912052023
Protection Structures for Bonded Wafers
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites
US117841982023
Wide Channel Semiconductor Device
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites
US117770402023
Semiconductor Device with Nanostructures
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites
US117640622023
Method of Forming Semiconductor Structure
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites
US116769802023
Image Sensor and Method of Making
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites
US116644032023
Manufacturing Method of Image Sensor Device Having Metal Grid Partially Embedded in Buffer Layer
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites
US115813492023
Backside Refraction Layer for Backside Illuminated Image Sensor and Methods of Forming the Same
Taiwan Semiconductor Manufacturing Company Limited
0 cites