13 Patents
- US126223092026Platinum-based Solder Body Contacts for Integration of a First Substrate with a Second Substrate
Newport Fab, LLC
0 cites - US125686802026Nickel Silicide in Bipolar Complementary-metal-oxide-semiconductor (bicmos) Device
Newport Fab, LLC
0 cites - US124567012025Efficient Integration of a First Substrate Without Solder Bumps with a Second Substrate Having Solder Bumps
Newport Fab, LLC
0 cites - 0 cites
- US123476732025Method for Forming a Semiconductor Structure Having a Porous Semiconductor Layer in RF Devices
Newport Fab, LLC
0 cites - US123242262025Method of Manufacturing Bipolar Complementary-metal-oxide-semiconductor (bicmos) Devices Using Nickel Silicide
Newport Fab, LLC
0 cites - US122482062025Integration of Optoelectronic Devices Comprising Lithium Niobate or Other Pockels Materials
Newport Fab, LLC
0 cites - US121990902025Method of Manufacturing Nickel Silicide in Bipolar Complementary-metal-oxide-semiconductor (bicmos)
Newport Fab, LLC
0 cites - US121838452024Group III-V Device on Group IV Substrate Using Contacts with Precursor Stacks
Newport Fab, LLC
0 cites - US120094372024Method for Manufacturing a Semiconductor Structure Having Group III-V Device on Group IV Substrate and Contacts with Liner Stacks
Newport Fab, LLC
0 cites - US119294422024Structure and Method for Process Control Monitoring for Group III-V Devices Integrated with Group IV Substrate
Newport Fab, LLC
0 cites - US115814522023Semiconductor Structure Having Group III-V Device on Group IV Substrate and Contacts with Precursor Stacks
Newport Fab, LLC
0 cites - US115455872023Semiconductor Structure Having Group III-V Device on Group IV Substrate and Contacts with Liner Stacks
Newport Fab, LLC
0 cites