Patents/Inventors

Donghyi Koh

Suwon-siKR4 patents

3 Patents

US124330172025
Integrated Circuit Device Including N-channel Metal-oxide Semiconductor (NMOS) Transistor Region and a P-channel Metal-oxide Semiconductor (PMOS) Transistor Region
SAMSUNG ELECTRONICS CO., Ltd.
0 cites
US120403262024
Method of Manufacturing an Integrated Circuit Device
SAMSUNG ELECTRONICS CO., Ltd.
0 cites
US117107392023
Integrated Circuit Device
SAMSUNG ELECTRONICS CO., Ltd.
0 cites