Patents/Inventors

Chung-hui Chen

HsinchuTW31 patents

31 Patents

US125637542026
Hybrid Decoupling Capacitor and Method Forming Same
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites
US124842802025
Silicide-layer-coupled Doped Portion of Active Region and Method of Fabricating Same
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites
US124514302025
Method of Fabricating Semiconductor Devices Having Different Architectures and Semiconductor Devices Fabricated Thereby
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites
US124463212025
Circuits Designed and Manufactured with First and Second Fin Boundaries
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites
US124084262025
Circuits Designed and Manufactured with First and Second Design Rules
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites
US123344282025
Cell Having Stacked Pick-up Region
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites
US122726492025
Semiconductor Device and Method
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites
US121990302025
Semiconductor Devices Including Decoupling Capacitors
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites
US121659722024
Method of Manufacturing Conductive Lines in a Circuit
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites
US121599042024
Cell Placement Optimization
Taiwan Semiconductor Manufacturing Co., Ltd.
0 cites
US121257812024
Cell Having Stacked Pick-up Region
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites
US120936272024
Semiconductor Device, and Method of Forming Same
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites
US120948722024
Capacitor in Nanosheet
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites
US120731652024
Standard Cell Design
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites
US120683062024
Integrated Circuit Device
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites
US120626522024
Zero Mask High Density Capacitor
Taiwan Semiconductor Manufacturing Company Limited
0 cites
US120210332024
Integrated Circuit Device Having Active Region Coupled to Metal Layers on Opposite Sides of Substrate, and Method
TAIWAN SEMICONDUCTOR MANUFACTURING Ltd.
0 cites
US119844442024
Semiconductor Device and Method of Manufacturing the Same
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY Ltd.
0 cites
US119676212024
Silicide-sandwiched Source/drain Region and Method of Fabricating Same
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites
USD10167382024
Battery Pack
SCHNEIDER ELECTRIC IT CORPORATION
0 cites
US119012832024
Capacitor and Method for Forming the Same
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites
US119012892024
Semiconductor Device Structure with Resistive Element
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites
US118429632023
Semiconductor Device and Method
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites
US118375352023
Semiconductor Devices Including Decoupling Capacitors
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites
US118174522023
Method for Forming Decoupling Capacitors Between the Interposing Conductors and the Multiple Gates
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites
USD10038322023
Uninterruptible Power Supply
SCHNEIDER ELECTRIC IT CORPORATION
0 cites
US117497592023
Decoupling Finfet Capacitors
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites
US116769572023
Integrated Circuit Device, System and Method
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites
US115812982023
Zero Mask High Density Capacitor
Taiwan Semiconductor Manufacturing Company Limited
0 cites
US115629532023
Cell Having Stacked Pick-up Region
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites
US115630952023
Silicide-sandwiched Source/drain Region and Method of Fabricating Same
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites