Patents/Inventors

Ching-shan Lin

HsinchuTW15 patents

13 Patents

US126127132026
Silicon Carbide Wafer and Method of Fabricating the Same
Globalwafers Co., Ltd.
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US125842382026
Silicon Carbide Crystals and Silicon Carbide Wafer
Globalwafers Co., Ltd.
0 cites
US125097942025
Method of Performing Crystal Growth Processes on a First Crystal Seed by Adjusting a Ratio Difference of an Axial Temperature Gradient and a Radial Temperature Gradient
Globalwafers Co., Ltd.
0 cites
US124660192025
Silicon Carbide Wafer and Method of Forming the Same
Globalwafers Co., Ltd.
0 cites
US123195812025
Method of Fabricating Silicon Carbide Material by Performing a First Annealing Process to Control Average Resistivity
Globalwafers Co., Ltd.
0 cites
US122760432025
Silicon Carbide Ingot and Method of Fabricating the Same
Globalwafers Co., Ltd.
0 cites
US121231052024
Crystal Growth Method and Wafer
Globalwafers Co., Ltd.
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US119879022024
Manufacturing Method of Silicon Carbide Wafer and Semiconductor Structure
Globalwafers Co., Ltd.
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US119526762024
Silicon Carbide Crystal
GLOBALWAFERS CO., Ltd.
0 cites
US118593062024
Manufacturing Method of Silicon Carbide Ingot
Globalwafers Co., Ltd.
0 cites
US118211052023
Silicon Carbide Seed Crystal and Method of Manufacturing Silicon Carbide Ingot
Globalwafers Co., Ltd.
0 cites
US117882042023
Silicon Carbide Wafer and Method of Fabricating the Same
Globalwafers Co., Ltd.
0 cites
US117812412023
Silicon Carbide Seed Crystal and Method of Manufacturing the Same, and Method of Manufacturing Silicon Carbide Ingot
Globalwafers Co., Ltd.
0 cites