- US12414479utility2025Sub 60nm Etchless MRAM Devices by Ion Beam Etching Fabricated T-shaped Bottom Electrode0 cites
- US12414353utility2025Method for Forming Semiconductor Structure0 cites
- US12414329utility2025Forming Low-resistance Capping Layer Over Metal Gate Electrode0 cites
- US12414303utility2025Ferroelectric Device and Wave Computing Device0 cites
- US12414288utility2025Semiconductor Device with a Vertical Channel Wrapped Around Gate, and Method for Manufacturing the Same0 cites
- US12414320utility2025Fin Field-effect Transistor Device with Composite Liner for the Fin0 cites
- US12414355utility2025Semiconductor Device and Manufacturing Method Thereof0 cites
- US12414484utility2025RRAM Structure0 cites
- US12414356utility2025Gate Structure and Method of Forming Same0 cites
- US12414321utility2025Contact Profile Optimization for IC Device Performance Improvement0 cites
- US12414330utility2025Multi-gate Device Including Semiconductor Fin Between Dielectric Fins and Method of Fabrication Thereof0 cites
- US12414344utility2025Semiconductor Device Having Active Regions of Different Dimensions and Method of Manufacturing the Same0 cites
- US12414281utility2025Implantations for Forming Source/drain Regions of Different Transistors0 cites
- US12414477utility2025Magnetic Random Access Memory and Manufacturing Method Thereof0 cites
- US12414331utility2025Isolation for Multigate Devices0 cites
- US12414396utility2025Optical Biosensor Device with Optical Signal Enhancement Structure0 cites
- US12414365utility2025Metal Gate Stacks and Methods of Fabricating the Same in Multi-gate Field-effect Transistors0 cites
- US12414362utility2025Fins Disposed on Stacks of Nanostructures Where the Nanostructures Are Wrapped Around by a Gate0 cites