- US11615982utility2023Reducing Spacing Between Conductive Features Through Implantation0 cites
- US11615991utility2023Semiconductor Device and Method0 cites
- US11616002utility2023Through-circuit Vias in Interconnect Structures0 cites
- US11616013utility2023Extended via Semiconductor Structure and Device0 cites
- US11616054utility2023Gate Structure for Semiconductor Devices0 cites
- US11616061utility2023Cut Metal Gate with Slanted Sidewalls0 cites
- US11616062utility2023Gate Isolation for Multigate Device0 cites
- US11616080utility2023Three-dimensional Memory Device with Ferroelectric Material0 cites
- US11616122utility2023Germanium Containing Nanowires and Methods for Forming the Same0 cites
- US11616143utility2023Semiconductor Devices with Backside Power Rail and Methods of Fabrication Thereof0 cites
- US11616151utility2023Channel Configuration for Improving Multigate Device Performance and Method of Fabrication Thereof0 cites
- US11617255utility2023Droplet Generator and Method of Servicing Extreme Ultraviolet Imaging Tool0 cites
- US11610982utility2023Void Elimination for Gap-filling in High-aspect Ratio Trenches0 cites
- US11609126utility2023Thermal Detection Circuit0 cites
- US11610778utility2023Self Aligned Litho Etch Process Patterning Method0 cites
- US11610822utility2023Structures for Tuning Threshold Voltage0 cites
- US11610823utility2023Method for Forming Semiconductor Device and Resulting Device0 cites
- US11610825utility2023Method for Calibrating Temperature in Chemical Vapor Deposition0 cites