Patents/Assignees

Shanghai Huali Integrated Circuit Corporation

84 patents in portfolio

US12506039utility2025
Failure Analysis and Location Method for Short Circuit Structure
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US12507460utility2025
MV Device and Method for Manufacturing Same
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US12507467utility2025
Method for Manufacturing High Dielectric Constant Metal Gate for NMOS and PMOS
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US12500128utility2025
Four-terminal Resistance Testing Structure
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US12501648utility2025
HV Device and Method for Manufacturing Same
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US12501680utility2025
Method for Manufacturing a Metal Gate by a Gate Replacement Process Including Carbon Ion Implantation of a Zero Interlayer Dielectric
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US12484216utility2025
Method for Manufacturing a Super Flash Memory
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US12453120utility2025
HV Device and Method for Manufacturing Same
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US12444656utility2025
Method for Monitoring Gate Oxide Thickness
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US12446297utility2025
Low Voltage Triggering Silicon Controlled Rectifier
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US12431357utility2025
Method for Manufacturing High-voltage Metal Gate Device
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US12432961utility2025
Integrated Structure of MOS Transistors Having Different Working Voltages and Method for Manufacturing Same
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US12424436utility2025
Process Method for Improving Reliability of Metal Gate High-voltage Device
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US12424451utility2025
Method for Reducing Contact Resistance
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US12417907utility2025
Method for Increasing Bridging Process Window of Contact Hole and Gate of Device
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US12400908utility2025
Epitaxial Growth Method for FDSOI Hybrid Region
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US12389663utility2025
Method for Making Gates of Different Sizes with Double Patterning Technology
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US12381078utility2025
Method for Reducing Loss of Dielectric Layer in IO Silicon Oxide Removal Process
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US12374580utility2025
Method for Manufacturing Shallow Trench Isolation
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US12374582utility2025
Method for Making Silicon Epitaxy of a FDSOI Device
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