3 Patents
- US122665752025Multiple Gate Field-effect Transistors Having Various Gate Oxide Thicknesses and Methods of Forming the Same
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US118942762024Multiple Gate Field-effect Transistors Having Various Gate Oxide Thicknesses and Methods of Forming the Same
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US118550982023Semiconductor Devices Having Dipole-inducing Elements
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites