Patents/Inventors

Ziwei Fang

HsinchuTW52 patents

43 Patents

US126044952026
Semiconductor Device with Multi-threshold Gate Structure
Taiwan Semiconductor Manufacturing Co., Ltd.
0 cites
US124842772025
Tuning Threshold Voltage in Field-effect Transistors
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites
US124577662025
Metal Gate Structures of Semiconductor Devices
Taiwan Semiconductor Manufacturing Co., Ltd.
0 cites
US124247262025
Antenna Assembly and Vehicle
FUYAO GLASS INDUSTRY GROUP CO., Ltd.
0 cites
US124143182025
Fabrication of Field Effect Transistors with Ferroelectric Materials
TAIWAN SEMICONDUCTIR MANUFACTURING CO., Ltd.
0 cites
US124068502025
Semiconductor Structure Having Metal Contact Features
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites
US124023942025
Semiconductor Structure
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY Ltd.
0 cites
US123896742025
Low Resistance Fill Metal Layer Material as Stressor in Metal Gates
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites
US123277212025
Ultraviolet Radiation Activated Atomic Layer Deposition
Taiwan Semiconductor Manufacturing Co., Ltd.
0 cites
US123289302025
Gate Structures for Semiconductor Devices
Taiwan Semiconductor Manufacturing Co., Ltd.
0 cites
US122782872025
Selective Internal Gate Structure for Ferroelectric Semiconductor Devices
Taiwan Semiconductor Manufacturing Co., Ltd.
0 cites
US122726042025
Integrated Circuit Device with Low Threshold Voltage
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites
US122665432025
Semiconductor Device Structure Having Gate Dielectric Layer
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites
US122496402025
Conformal Transfer Doping Method for Fin-like Field Effect Transistor
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites
US122118432025
Manufacturing Method of Fin-type Field Effect Transistor Structure
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites
US121913042025
Method of Manufacturing a Semiconductor Device and a Semiconductor Device
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites
US121659122024
Semiconductor Structure with Air Gap and Method Sealing the Air Gap
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites
US121320912024
Work Function Layers for Transistor Gate Electrodes
Taiwan Semiconductor Manufacturing Co., Ltd.
0 cites
US121070862024
Field Effect Transistor Contact with Reduced Contact Resistance
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites
US121007452024
Dual Metal Capped via Contact Structures for Semiconductor Devices
Taiwan Semiconductor Manufacturing Co., Ltd.
0 cites
US120517462024
Semiconductor Device Structure with Dielectric Layer
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites
US120403642024
Semiconductor Device Structure
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites
US120340582024
Gate Stack Treatment for Ferroelectric Transistors
Taiwan Semiconductor Manufacturing Co., Ltd.
0 cites
US120094032024
Semiconductor Structure with Metal Cap Layer and Method for Manufacturing the Same
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites
US119963282024
Cobalt Fill for Gate Structures
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites
US119233672024
Low Resistance Fill Metal Layer Material as Stressor in Metal Gates
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd
0 cites
US119234302024
Gate Structure and Patterning Method for Multiple Threshold Voltages
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites
US119012412024
Integrated Circuit Device with Low Threshold Voltage
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites
US119012422024
Gate Structures for Semiconductor Devices
Taiwan Semiconductor Manufacturing Co., Ltd.
0 cites
US119014502024
Ferroelectric Structure for Semiconductor Devices
Taiwan Semicondutor Manufacturing Co., Ltd.
0 cites
US118627132024
Conformal Transfer Doping Method for Fin-like Field Effect Transistor
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites
US118551812023
Tuning Threshold Voltage in Field-effect Transistors
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites
US118552082023
Method for Forming Fin Field Effect Transistor (finfet) Device Structure
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites
US118429272023
Semiconductor Structure
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY Ltd.
0 cites
US117284142023
Semiconductor Device Including a Fin-fet and Method of Manufacturing the Same
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites
US117107792023
Semiconductor Device Including Interface Layer and Method of Fabricating Thereof
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites
US116950062023
Method of Manufacturing a Semiconductor Device and a Semiconductor Device
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites
US116886312023
Semiconductor Structure with Air Gap and Method Sealing the Air Gap
Taiwan Semiconductor Manufacturing Co., Ltd.
0 cites
US116706942023
Dual Metal Capped via Contact Structures for Semiconductor Devices
Taiwan Semiconductor Manufacturing Co., Ltd.
0 cites
US116264932023
Semiconductor Device Structure
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites
US116213382023
Gate Stack Treatment for Ferroelectric Transistors
Taiwan Semiconductor Manufacturing Co., Ltd.
0 cites
US115946332023
Selective Internal Gate Structure for Ferroelectric Semiconductor Devices
Taiwan Semiconductor Manufacturing Co., Ltd.
0 cites
US115630992023
Semiconductor Structure
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites