Patents/Inventors

Zihao Yang

San Francisco, CAUS21 patents

21 Patents

US125725122026
Synchronizing an External Location
Dropbox, Inc.
0 cites
US124715022025
High Quality Quantum Computer Components
Applied Materials, Inc.
0 cites
US123177582025
SNSPD with Integrated Aluminum Nitride Seed or Waveguide Layer
Applied Materials, Inc.
0 cites
US122494892025
Optical Device Improvement
Applied Materials, Inc.
0 cites
US121856432024
High Critical Temperature Metal Nitride Layer with Oxide or Oxynitride Seed Layer
Applied Materials, Inc.
0 cites
US121480972024
Methods and Systems for 3D Hand Pose Estimation from RGB Images
HUAWEI TECHNOLOGIES CO., Ltd.
0 cites
US121056772024
Per-node Metadata for Custom Node Behaviors Across Platforms
Dropbox, Inc.
0 cites
US120967012024
Method of Making High Critical Temperature Metal Nitride Layer
Applied Materials, Inc.
0 cites
US120558212024
Structure and Method of Bi-layer Pixel Isolation in Advanced LCOS Back-plane
Applied Materials, Inc.
0 cites
US120529352024
Method of Making High Critical Temperature Metal Nitride Layer
Applied Materials, Inc.
0 cites
US119014772024
Light Absorbing Barrier for LED Fabrication Processes
Applied Materials, Inc.
0 cites
US119014842024
Methods and Systems for UV LED Structures
Applied Materials, Inc.
0 cites
US118023492023
Method for Depositing High Quality PVD Films
Applied Materials, Inc.
0 cites
US117888832023
SNSPD with Integrated Aluminum Nitride Seed or Waveguide Layer
Applied Materials, Inc.
0 cites
US117789262023
Method and Apparatus for Deposition of Multilayer Device with Superconductive Film
Applied Materials, Inc.
0 cites
US117394182023
Method and Apparatus for Deposition of Metal Nitrides
Applied Materials, Inc.
0 cites
US116785892023
Method of Making High Critical Temperature Metal Nitride Layer
Applied Materials, Inc.
0 cites
US116535762023
SNSPD with Integrated Aluminum Nitride Seed or Waveguide Layer
Applied Materials, Inc.
0 cites
US116047692023
Synchronizing an External Location
Dropbox, Inc.
0 cites
US116007612023
High Critical Temperature Metal Nitride Layer with Oxide or Oxynitride Seed Layer
Applied Materials, Inc.
0 cites
US115865902023
Synchronizing an External Location
Dropbox, Inc.
0 cites