Patents/Inventors

Zhongwei Zhu

Sunnyvale, CAUS1 patent

3 Patents

US122566452025
Chemical Etch Nonvolatile Materials for MRAM Patterning
Lam Research Corporation
0 cites
US119231892024
Capping Layer for a Hafnium Oxide-based Ferroelectric Material
Lam Research Corporation
0 cites
US119234042024
Modifying Ferroelectric Properties of Hafnium Oxide with Hafnium Nitride Layers
Lam Research Corporation
0 cites