131 Patents
- US126157752026Backside Gate Line Slit Structure to Reduce Wafer Bow in a Three-dimensional Memory Device Comprising Bonded Devices
Yangzte Memory Technologies Co., Ltd.
0 cites - US126157722026Three-dimensional Memory Devices and Methods for Forming the Same
YANGTZE MEMORY TECHNOLOGIES CO., Ltd.
0 cites - US126157732026Three-dimensional NAND Memory Device with Reduced Resistance-capacitance Delay
Yangtze Memory Technologies Co., Ltd.
0 cites - US125987482026Three-dimensional Memory Devices and Methods for Forming the Same
YANGTZE MEMORY TECHNOLOGIES CO., Ltd.
0 cites - US125974682026Three-dimensional Memory Devices and Fabricating Methods Thereof
YANGTZE MEMORY TECHNOLOGIES CO., Ltd.
0 cites - US125934452026Control Gate Structures in Three-dimensional Memory Devices and Methods for Forming the Same
Yangtze Memory Technologies Co., Ltd.
0 cites - US125913632026Memory Programming Method, Memory Device, and Memory System
YANGTZE MEMORY TECHNOLOGIES CO., Ltd.
0 cites - US125572792026Three-dimensional Memory and Fabrication Method for the Same
YANGTZE MEMORY TECHNOLOGIES CO., Ltd.
0 cites - US125572992026Three-dimensional Memory Devices and Fabricating Methods Thereof
YANGTZE MEMORY TECHNOLOGIES CO., Ltd.
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- US125433102026Three-dimensional Memory Devices and Fabricating Methods Thereof
Yangtze Memory Technologies Co., Ltd.
0 cites - US125139062025Three-dimensional NAND Memory Device Having Word Line Contact with Dielectric Filler
Yangtze Memory Technologies Co., Ltd.
0 cites - US125139052025Three-dimensional Memory Device and Method of Forming the Same
Yangtze Memory Technologies Co., Ltd.
0 cites - US125074042025Three-dimensional Memories Having Isolation Structures and Fabrication Methods Thereof
YANGTZE MEMORY TECHNOLOGIES CO., Ltd.
0 cites - US125016162025Memory System, Semiconductor Device and Fabrication Method Therefor
Yangtze Memory Technologies Co., Ltd.
0 cites - US124904322025Method of Fabricating a Semiconductor Device Using Laser Annealing
Yangtze Memory Technologies Co., Ltd.
0 cites - US124904302025Three-dimensional Memory Devices and Methods for Forming the Same
YANGTZE MEMORY TECHNOLOGIES CO., Ltd.
0 cites - US124890592025Vertical Memory Devices and Method of Fabrication Thereof
Yangtze Memory Technologies Co., Ltd.
0 cites - US124777492025Three-dimensional Memory Devices Having Semiconductor Assemblies Bonded by Bonding Layer and Methods for Forming the Same
YANGTZE MEMORY TECHNOLOGIES CO., Ltd.
0 cites - US124712792025Channel Structures for Three-dimensional Memory Devices and Methods for Forming the Same
Yangtze Memory Technologies Co., Ltd.
0 cites - US124647282025Memory Devices Having Vertical Transistors and Methods for Forming the Same
YANGTZE MEMORY TECHNOLOGIES CO., Ltd.
0 cites - US124514522025Three-dimensional Memory and Fabrication Method Thereof
YANGTZE MEMORY TECHNOLOGIES CO., Ltd.
0 cites - US124446792025Three-dimensional Memory Devices Having a Cylindrical Body and Plate Line Contact Segments
Yangtze Memory Technologies Co., Ltd.
0 cites - US124395842025Dynamic Flash Memory (DFM) with Ring-type Insulator in Channel for Improved Retention
Yangtze Memory Technologies Co., Ltd.
0 cites - US124329212025Three-dimensional Memory Devices and Methods for Forming the Same
YANGTZE MEMORY TECHNOLOGIES CO., Ltd.
0 cites - US124329182025Three-dimensional Memory Devices and Methods for Forming the Same
YANGTZE MEMORY TECHNOLOGIES CO., Ltd.
0 cites - US124190502025Semiconductor Device and Its Manufacturing Method, Memory and Memory System
Yangtze Memory Technologies Co., Ltd.
0 cites - US124126282025Methods for Forming Three-dimensional Memory Devices
YANGTZE MEMORY TECHNOLOGIES CO., Ltd.
0 cites - US124069282025Three-dimensional Memory Devices and Fabricating Methods Thereof
Yangtze Memory Technologies Co., Ltd.
0 cites - US124023132025Methods for Forming Three-dimensional Memory Device
YANGTZE MEMORY TECHNOLOGIES CO., Ltd.
0 cites - US123880372025Three-dimensional Memory Devices and Methods for Forming the Same
YANGTZE MEMORY TECHNOLOGIES CO., Ltd.
0 cites - US123880362025Three-dimensional Memory Devices and Methods for Forming the Same
YANGTZE MEMORY TECHNOLOGIES CO., Ltd.
0 cites - US1236389820253D NAND Memory Device with Non-uniform Channel Structure and Method for Forming the Same
Yangtze Memory Technologies Co., Ltd.
0 cites - US123638962025Trench Structures for Three-dimensional Memory Devices
Yangtze Memory Technologies Co., Ltd.
0 cites - US123566162025Openings Layout of Three-dimensional Memory Device
YANGTZE MEMORY TECHNOLOGIES CO., Ltd.
0 cites - US123476842025Method and Structure for Cutting Dense Line Patterns Using Self-aligned Double Patterning
Yangtze Memory Technologies Co., Ltd.
0 cites - US123275922025Vertical Memory Devices and Methods for Operating the Same
YANGTZE MEMORY TECHNOLOGIES CO., Ltd.
0 cites - US123288672025Memory Devices Having Vertical Transistors and Methods for Forming the Same
YANGTZE MEMORY TECHNOLOGIES CO., Ltd.
0 cites - US123225962025Methods for Thermal Treatment of a Semiconductor Layer in Semiconductor Device
YANGTZE MEMORY TECHNOLOGIES CO., Ltd.
0 cites - 0 cites
- US123174962025Memory and Controlling Method Thereof, Memory System and Electronic Device
Yangtze Memory Technologies Co., Ltd.
0 cites - US123006482025Three-dimensional Memory Devices and Methods for Forming the Same
YANGTZE MEMORY TECHNOLOGIES CO., Ltd.
0 cites - US123025602025Three-dimensional Memory Device with Divided Drain Select Gate Lines and Method for Forming the Same
YANGTZE MEMORY TECHNOLOGIES CO., Ltd.
0 cites - US123025732025Three-dimensional Memory Device with Backside Interconnect Structures
YANGTZE MEMORY TECHNOLOGIES CO., Ltd.
0 cites - US122951392025Three-dimensional Memory Devices and Methods for Forming the Same
YANGTZE MEMORY TECHNOLOGIES CO., Ltd.
0 cites - US122782092025Peripheral Circuit Having Recess Gate Transistors and Method for Forming the Same
YANGTZE MEMORY TECHNOLOGIES CO., Ltd.
0 cites - US122740492025Memory Devices Having Vertical Transistors and Stacked Storage Units and Methods for Forming the Same
YANGTZE MEMORY TECHNOLOGIES CO., Ltd.
0 cites - US122726452025Three-dimensional Memory Devices and Fabricating Methods Thereof
Yangtze Memory Technologies Co., Ltd.
0 cites - US122664032025Three-dimensional NAND Memory and Fabrication Method Thereof
Yangtze Memory Technologies Co., Ltd.
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- US122565402025Three-dimensional Memory Devices with Improved Back-side Channel Structures
YANGTZE MEMORY TECHNOLOGIES CO., Ltd.
0 cites - US122551812025Methods for Forming Three-dimensional Memory Devices
YANGTZE MEMORY TECHNOLOGIES CO., Ltd.
0 cites - US122323132025Staircase Structure in Three-dimensional Memory Device and Method for Forming the Same
YANGTZE MEMORY TECHNOLOGIES CO., Ltd.
0 cites - US122323202025Word Line Structure of Three-dimensional Memory Device
YANGTZE MEMORY TECHNOLOGIES CO., Ltd.
0 cites - US122197732025Embedded Pad Structures of Three-dimensional Memory Devices and Fabrication Methods Thereof
Yangtze Memory Technologies Co., Ltd.
0 cites - US122056492025Non-volatile Memory Devices and Data Erasing Methods
Yangtze Memory Technologies Co., Ltd.
0 cites - US122058952025Three-dimensional Memory Device Having Staircase Structure and Method for Forming the Same
YANGTZE MEMORY TECHNOLOGIES CO., Ltd.
0 cites - US122074662025Method of Forming a Three-dimensional NAND Memory Device with Reduced RC Delay
Yangtze Memory Technologies Co., Ltd.
0 cites - US121912692025Three-dimensional Memory Device and Method for Forming the Same
YANGTZE MEMORY TECHNOLOGIES CO., Ltd.
0 cites - US121763092024Three-dimensional Memory Devices and Methods for Forming the Same
YANGTZE MEMORY TECHNOLOGIES CO., Ltd.
0 cites - US121710982024Three-dimensional Memory Device with Improved Charge Lateral Migration and Method for Forming the Same
YANGTZE MEMORY TECHNOLOGIES CO., Ltd.
0 cites - US121702572024Three-dimensional Memory Devices and Methods for Forming the Same
YANGTZE MEMORY TECHNOLOGIES CO., Ltd.
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- US121441752024Three Dimensional NAND Memory Device with Novel Support Structures
Yangtze Memory Technologies Co., Ltd.
0 cites - US121365862024Semiconductor Devices Having a Conductive Layer Stacking with an Insulating Layer and a Spacer Structure Through the Conductive Layer
YANGTZE MEMORY TECHNOLOGIES CO., Ltd.
0 cites - US121366182024Three-dimensional Memory Device with Backside Source Contact
YANGTZE MEMORY TECHNOLOGIES CO., Ltd.
0 cites - US121273932024Memory Devices Having Vertical Transistors and Methods for Forming the Same
YANGTZE MEMORY TECHNOLOGIES CO., Ltd.
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- US121130372024Three-dimensional Memory Devices and Methods for Forming the Same
YANGTZE MEMORY TECHNOLOGIES CO., Ltd.
0 cites - US120966312024Three-dimensional NAND Memory Device and Method of Forming the Same
Yangtze Memory Technologies Co., Ltd.
0 cites - USRE0501372024Vertical Memory Devices and Methods of Manufacturing the Same
Samsung Electronics Co., Ltd.
0 cites - US120894132024Peripheral Circuit Having Recess Gate Transistors and Method for Forming the Same
YANGTZE MEMORY TECHNOLOGIES CO., Ltd.
0 cites - US120824072024Three-dimensional Memory Device and Method for Forming the Same
YANGTZE MEMORY TECHNOLOGIES CO., Ltd.
0 cites - US120824082024Three-dimensional Memory Devices Having First Semiconductor Structure Bonded with Second Semiconductor Structure Each Including Peripheral Circuit and Methods for Forming the Same
YANGTZE MEMORY TECHNOLOGIES CO., ˜LTD.
0 cites - US120824112024Three-dimensional Memory Device with Backside Interconnect Structures
YANGTZE MEMORY TECHNOLOGIES CO., Ltd.
0 cites - US120823992024Memory Devices Having Vertical Transistors in Staggered Layouts
YANGTZE MEMORY TECHNOLOGIES CO., Ltd.
0 cites - US120698542024Three-dimensional Memory Devices and Methods for Forming the Same
YANGTZE MEMORY TECHNOLOGIES CO., Ltd.
0 cites - US1206825020243D NAND Memory Device and Method of Forming the Same
Yangtze Memory Technologies Co., Ltd.
0 cites - US120588582024Three-dimensional Memory Devices and Methods for Forming the Same
YANGTZE MEMORY TECHNOLOGIES CO., Ltd.
0 cites - US120573722024Methods for Forming Contact Structures and Semiconductor Devices Including Forming a Spacer Structure Into a Base Structure
YANGTZE MEMORY TECHNOLOGIES CO., Ltd.
0 cites - US120528702024Staircase Structure with Multiple Divisions for Three-dimensional Memory
YANGTZE MEMORY TECHNOLOGIES CO., Ltd.
0 cites - US120481512024Methods for Forming Three-dimensional Memory Devices with Backside Source Contacts
YANGTZE MEMORY TECHNOLOGIES CO., Ltd.
0 cites - US1204655520243D NAND Memory Device and Method of Forming the Same
Yangtze Memory Technologies Co., Ltd.
0 cites - US120481482024Three-dimensional Memory Devices and Methods for Forming the Same
YANGTZE MEMORY TECHNOLOGIES CO., Ltd.
0 cites - US120417732024Three-dimensional NAND Memory Device and Method of Forming the Same
Yangtze Memory Technologies Co., Ltd.
0 cites - US1203394420243D NAND Memory Device and Method of Forming the Same
Yangtze Memory Technologies Co., Ltd.
0 cites - US120272072024Vertical Memory Devices and Methods for Operating the Same
Yangtze Memory Technologies Co., Ltd.
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- US120226562024Local Contacts of Three-dimensional Memory Devices and Methods for Forming the Same
YANGTZE MEMORY TECHNOLOGIES CO., Ltd.
0 cites - US120027572024Staircase Structure in Three-dimensional Memory Device and Method for Forming the Same
YANGTZE MEMORY TECHNOLOGIES CO., Ltd.
0 cites - US119961522024Three-dimensional Memory Devices and Methods for Forming the Same
YANGTZE MEMORY TECHNOLOGIES CO., Ltd.
0 cites - US119800302024Three-dimensional Memory Device and Fabrication Method Thereof
Yangtze Memory Technologies Co., Ltd.
0 cites - US119744312024Three-dimensional Memory Devices and Fabricating Methods Thereof
Yangtze Memory Technologies Co., Ltd.
0 cites - US119633492024Methods for Forming Three-dimensional Memory Devices with Backside Source Contacts
YANGTZE MEMORY TECHNOLOGIES CO., Ltd.
0 cites - 0 cites
- US119355962024Three-dimensional Memory Devices Having Polysilicon Layer and Bonded Semiconductor Structures and Methods for Forming the Same
YANGTZE MEMORY TECHNOLOGIES CO., Ltd.
0 cites - US119291192024Three-dimensional Memory Devices and Memory System
YANGTZE MEMORY TECHNOLOGIES CO., Ltd.
0 cites - US119105992024Contact Structures for Three-dimensional Memory Device
Yangtze Memory Technologies Co., Ltd.
0 cites - US119032042024Interconnect Structures of Three-dimensional Memory Devices
YANGTZE MEMORY TECHNOLOGIES CO., Ltd.
0 cites - US119031952024Openings Layout of Three-dimensional Memory Device
Yangtze Memory Technologies Co., Ltd.
0 cites - US1186255820243D NAND Memory Device and Method of Forming the Same
Yangtze Memory Technologies Co., Ltd.
0 cites - US118622512024Method and Apparatus for Data Erase in Memory Devices
Yangtze Memory Technologies Co., Ltd.
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- US1183908320233D NAND Memory Device and Method of Forming the Same
Yangtze Memory Technologies Co., Ltd.
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Yangtze Memory Technologies Co., Ltd.
0 cites - US117587312023Three-dimensional Memory Device Having a Shielding Layer and Method for Forming the Same
YANGTZE MEMORY TECHNOLOGIES CO., Ltd.
0 cites - US117587292023Three-dimensional Memory Device Having a Shielding Layer and Method for Forming the Same
YANGTZE MEMORY TECHNOLOGIES CO., Ltd.
0 cites - US117513942023Three-dimensional Memory Device and Method for Forming the Same
YANGTZE MEMORY TECHNOLOGIES CO., Ltd.
0 cites - US117497372023Memory Device with Bottom-select-gate Structure and Method for Forming the Same
YANGTZE MEMORY TECHNOLOGIES CO., Ltd.
0 cites - 0 cites
- US117299712023Trench Structures for Three-dimensional Memory Devices
Yangtze Memory Technologies Co., Ltd.
0 cites - US117168532023Method for Fabricating Three-dimensional Memory Device by Thickening an Epitaxial Layer
YANGTZE MEMORY TECHNOLOGIES CO., Ltd.
0 cites - US116996592023Staircase Structure in Three-dimensional Memory Device and Method for Forming the Same
YANGTZE MEMORY TECHNOLOGIES CO., Ltd.
0 cites - US116997322023Method for Forming Memory Device Comprising Bottom-select-gate Structure
Yangtze Memory Technologies Co., Ltd.
0 cites - US116964392023Staircase Structure in Three-dimensional Memory Device and Method for Forming the Same
YANGTZE MEMORY TECHNOLOGIES CO., Ltd.
0 cites - US116658922023Staircase Structure in Three-dimensional Memory Device and Method for Forming the Same
YANGTZE MEMORY TECHNOLOGIES CO., Ltd.
0 cites - US116264162023Method for Forming Three-dimensional Memory Device with Backside Source Contact
YANGTZE MEMORY TECHNOLOGIES CO., Ltd.
0 cites - US116212752023Three-dimensional Memory Device with Hydrogen-rich Semiconductor Channels
YANGTZE MEMORY TECHNOLOGIES CO., Ltd.
0 cites - US116006332023Local Contacts of Three-dimensional Memory Devices and Methods for Forming the Same
YANGTZE MEMORY TECHNOLOGIES CO., Ltd.
0 cites - US115879452023Three-dimensional NAND Memory Device with Reduced RC Delay
Yangtze Memory Technologies Co., Ltd.
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YANGTZE MEMORY TECHNOLOGIES CO., Ltd.
0 cites - US115749192023Openings Layout of Three-dimensional Memory Device
YANGTZE MEMORY TECHNOLOGIES CO., Ltd.
0 cites - US115629452023Semiconductor Device Having a Spacer Structure in a Conductive Layer and a Contact Structure in the Spacer Structure
YANGTZE MEMORY TECHNOLOGIES CO., Ltd.
0 cites - US115575702023Methods for Forming Three-dimensional Memory Devices
YANGTZE MEMORY TECHNOLOGIES CO., Ltd.
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Yangtze Memory Technologies Co., Ltd.
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