5 Patents
- US124329032025Semiconductor Structure and Method for Fabricating Same
CHANGXIN MEMORY TECHNOLOGIES, Inc.
0 cites - US123762902025Semiconductor Structure Having Buried Word Line Structure with Dielectric Layers of Different Dielectric Constants, and Manufacturing Method Thereof
CHANGXIN MEMORY TECHNOLOGIES, Inc.
0 cites - US123566072025Semiconductor Structure and Manufacturing Method Thereof
CHANGXIN MEMORY TECHNOLOGIES, Inc.
0 cites - US122216732025Aluminum Nitride-reinforced Aluminum Matrix Composite (AMC) and Preparation Method Thereof
Inner Mongolia Metal Material Research Institute
0 cites - US118715542024Semiconductor Structure, and Manufacturing Method and Control Method Thereof
CHANGXIN MEMORY TECHNOLOGIES, Inc.
0 cites