81 Patents
- US125882472026Spacer Structures for Nano-sheet-based Devices
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US125573582026Nanosheet Semiconductor Device and Method for Manufacturing the Same
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US125433522026Integrated Circuit with Bottom Dielectric Insulators and Fin Sidewall Spacers for Reducing Source/drain Leakage Currents
Taiwan Semiconductor Manufacturing Co., Ltd.
0 cites - US125385112026Semiconductor Device and Method Fabricating the Same
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - 0 cites
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- US125324922026Structure and Formation Method of Semiconductor Device with Epitaxial Structures
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US125325052026Semiconductor Structure and Method for Forming the Same
Taiwan Semiconductor Manufacturing Co., Ltd.
0 cites - 0 cites
- US125139372025Semiconductor Devices and Methods of Fabrication Thereof
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - 0 cites
- US125016602025Field Effect Transistor with Merged Epitaxy Backside Cut and Method
Taiwan Semiconductor Manufacturing Co., Ltd.
0 cites - US124842462025Method of Manufacturing a Semiconductor Device Including Forming a Sidewall Spacer on a Sidewall of a Channel Structure
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US124842952025Method (and Related Apparatus) for Forming a Semiconductor Device with Reduced Spacing Between Nanostructure Field-effect Transistors
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US124577982025Dielectric Liner for Field Effect Transistors
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US124531732025Integrated Circuits with Gate Cut Features
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - US124531742025Integrated Circuits with Finfet Gate Structures
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - US124463052025Uniform Gate Width for Nanostructure Devices
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - US124463192025Semiconductor Device Structure and Methods of Forming the Same
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US124380432025Semiconductor Structure with Staggered Selective Growth
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - 0 cites
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- US123827102025Method for Forming Long Channel Back-side Power Rail Device
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - 0 cites
- US123476902025Method for Metal Gate Cut and Structure Thereof
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - US123477752025Semiconductor Devices with Backside Power Rail and Methods of Fabrication Thereof
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US123493792025Semiconductor Devices and Methods of Manufacture
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US123425872025Integrated Circuit with Nanostructure Transistors and Bottom Dielectric Insulators
Taiwan Semiconductor Manufacturing Co., Ltd.
0 cites - US123426162025Semiconductor Device Structure and Methods of Forming the Same
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US123362262025Semiconductor Device Structure Including Stacked Nanostructures
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US123362402025Transistor Including Dielectric Barrier and Manufacturing Method Thereof
Taiwan Semiconductor Manufacturing Co., Ltd.
0 cites - US123175402025Method for Manufacturing Semiconductor Structure with Isolation Feature
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US123007322025Gate All Around Transistor with Dual Inner Spacers
Taiwan Semiconductor Manufacturing Co., Ltd.
0 cites - 0 cites
- US122727322025Method for Forming Epitaxial Source/drain Features and Semiconductor Devices Fabricated Thereof
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US122666542025Finfet Devices and Methods of Forming the Same
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US122374182025Liner for a Bi-layer Gate Helmet and the Fabrication Thereof
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - US122058192025Method and Device for Forming Metal Gate Electrodes for Transistors
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - US122059982025Semiconductor Device with Wrap Around Silicide and Hybrid Fin
Taiwan Semiconductor Manufacturing Co., Ltd.
0 cites - US121913712025Field Effect Transistor with Disabled Channels and Method
Taiwan Semiconductor Manufacturing Co., Ltd.
0 cites - US121071692024Contact Structure for Stacked Multi-gate Device
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US120876362024Semiconductor Device Including a Finfet Structure and Method for Fabricating the Same
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US120877682024Semiconductor Device Structure and Method for Forming the Same
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US120742042024Semiconductor Structure and Method for Forming the Same
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - 0 cites
- US120516932024Method for Manufacturing Semiconductor Structure with Isolation Strips
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US120517362024Field Effect Transistor with Inner Spacer Liner Layer and Method
Taiwan Semiconductor Manufacturing Co., Ltd.
0 cites - US120340042024Method (and Related Apparatus) for Forming a Semiconductor Device with Reduced Spacing Between Nanostructure Field-effect Transistors
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US120340622024Semiconductor Device Structure and Method for Forming the Same
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US120092532024Semiconductor Structure with Staggered Selective Growth
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - US120094102024Semiconductor Device and Method Fabricating the Same
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - US119962932024Method for Metal Gate Cut and Structure Thereof
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - US119964812024Liner for a Bi-layer Gate Helmet and the Fabrication Thereof
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - 0 cites
- US119788022024Finfet Devices and Methods of Forming the Same
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US119675942024Semiconductor Device Structure and Methods of Forming the Same
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US119357942024Method for Forming Long Channel Back-side Power Rail Device
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US119292872024Dielectric Liner for Field Effect Transistors
Taiwan Semiconductor Manufacturing Co., Ltd.
0 cites - US119232512024Methods of Cutting Metal Gates and Structures Formed Thereof
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US119161222024Gate All Around Transistor with Dual Inner Spacers
Taiwan Semiconductor Manufacturing Co., Ltd.
0 cites - US119013642024Semiconductor Device Structure and Methods of Forming the Same
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - 0 cites
- US118550822023Integrated Circuits with Finfet Gate Structures
Taiwan Semiconductor Manufacturing Co., Ltd.
0 cites - US118550842023Integrated Circuits with Finfet Gate Structures
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - US118550962023Uniform Gate Width for Nanostructure Devices
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd
0 cites - US118551682023Semiconductor Device and Manufacturing Method Thereof
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US118552162023Inner Spacers for Gate-all-around Transistors
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - US118483262023Integrated Circuits with Gate Cut Features
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - 0 cites
- US117769612023Semiconductor Device and Manufacturing Method Thereof for Selectively Etching Dummy Fins
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - US117107742023Method for Forming Epitaxial Source/drain Features and Semiconductor Devices Fabricated Thereof
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US117054522023Method (and Related Apparatus) for Forming a Semiconductor Device with Reduced Spacing Between Nanostructure Field-effect Transistors
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US116997602023Contact Structure for Stacked Multi-gate Device
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US116768192023Method for Metal Gate Cut and Structure Thereof
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - US116317542023Method of Fabricating Semiconductor Device
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - 0 cites
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- US116057372023Semiconductor Device and Manufacturing Method Thereof
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - US115812242023Method for Forming Long Channel Back-side Power Rail Device
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US115576602023Method and Device for Forming Cut-metal-gate Feature
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - US115454002023Methods of Cutting Metal Gates and Structures Formed Thereof
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites