15 Patents
- 0 cites
- US124865952025Methods for Crystal Growth by Replacing a Sublimated Target Source Material with a Candidate Source Material
MEISHAN BOYA ADVANCED MATERIALS CO., Ltd.
0 cites - US124242112025Method and Device for Compressing Finite-state Transducers Data
GUANGZHOU ZIIPIN NETWORK TECHNOLOGY CO., Ltd
0 cites - US122867252025Methods and Devices for Growing Crystals with High Uniformity Without Annealing
MEISHAN BOYA ADVANCED MATERIALS CO., Ltd.
0 cites - US121881462025Methods and Systems for Controlling Crystal Growth
MEISHAN BOYA ADVANCED MATERIALS CO., Ltd.
0 cites - US119820142024Open Czochralski Furnace for Single Crystal Growth
MEISHAN BOYA ADVANCED MATERIALS CO., Ltd.
0 cites - US119269222024Methods for Crystal Growth by Replacing a Sublimated Target Source Material with a Candidate Source Material
MEISHAN BOYA ADVANCED MATERIALS CO., Ltd.
0 cites - US118850372024Open Czochralski Furnace for Single Crystal Growth
MEISHAN BOYA ADVANCED MATERIALS CO., Ltd.
0 cites - US118517822023Open Czochralski Furnace for Single Crystal Growth
MEISHAN BOYA ADVANCED MATERIALS CO., Ltd.
0 cites - US118517832023Open Czochralski Furnace for Single Crystal Growth
MEISHAN BOYA ADVANCED MATERIALS CO., Ltd.
0 cites - US116555572023Methods and Devices for Growing Crystals with High Uniformity Without Annealing
MEISHAN BOYA ADVANCED MATERIALS CO., Ltd.
0 cites - US115726342023Open Czochralski Furnace for Single Crystal Growth
MEISHAN BOYA ADVANCED MATERIALS CO., Ltd.
0 cites - US115663412023Open Czochralski Furnace for Single Crystal Growth
MEISHAN BOYA ADVANCED MATERIALS CO., Ltd.
0 cites - US115663422023Open Czochralski Furnace for Single Crystal Growth
MEISHAN BOYA ADVANCED MATERIALS CO., Ltd.
0 cites - US115663432023Open Czochralski Furnace for Single Crystal Growth
MEISHAN BOYA ADVANCED MATERIALS CO., Ltd.
0 cites