Zhenhai Yang

2 Patents

• US126220882026

  Functional Polycrystalline Silicon Tunneling Silicon Oxide Passivated Contact Structure and Preparation Method Thereof

  Ningbo Institute Of Materials Technology And Engineering, Chinese Academy Of Sciences

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• US125074992025

  Laminated Dopant Source Structure, Relevant High-quality Emitter and Preparation Method Thereof

  NINGBO INSTITUTE OF MATERIALS TECHNOLOGY AND ENGINEERING, CHINESE ACADEMY OF SCIENCES

  0 cites