11 Patents
- US125817212026Method for Gap Filling with Selectively Formed Seed Layer and Heteroepitaxial Cap Layer
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US123083692025Method of Manufacturing a Semiconductor Device and a Semiconductor Device
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US122665732025Transistor Isolation Regions and Methods of Forming the Same
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US121070152024NMOS and PMOS Transistor Gates with Hafnium Oxide Layers and Lanthanum Oxide Layers
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - 0 cites
- US120573512024Semiconductor Device and Methods of Manufacturing the Same
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US119014422024Method of Manufacturing a Semiconductor Device and a Semiconductor Device
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US117768512023Semiconductor Device with Multi-layered Source/drain Regions Having Different Dopant Concentrations and Manufacturing Method Thereof
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US117217602023Dopant Concentration Boost in Epitaxially Formed Material
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US116770152023Method of Manufacturing a Semiconductor Device and a Semiconductor Device
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - 0 cites