Zheng Hui Lim

2 Patents

• US125882582026

  Stacked Transistor Isolation Features and Methods of Forming the Same

  Taiwan Semiconductor Manufacturing Co., Ltd.

  0 cites
• US125504182026

  Etch Stop Layer for Removal of Substrate in Stacking Transistors and Methods of Forming the Same

  Taiwan Semiconductor Manufacturing Co., Ltd.

  0 cites