Patents/Inventors

Zhang-ying Yan

HsinchuTW17 patents

16 Patents

US125805692026
Multi-bit Level Shifter
TSMC NANJING COMPANY, LIMITED
0 cites
US125627202026
Method of Forming Semiconductor Device Including Daisy-chained Delay Cells
TSMC NANJING COMPANY, LIMITED
0 cites
US125004122025
Integrated Circuit and an Operation Method Thereof
TSMC CHINA COMPANY LIMITED
0 cites
US124826592025
Semiconductor Device with T-shaped Active Region and Methods of Forming Same
TSMC NANJING COMPANY, LIMITED
0 cites
US124371362025
Method for Intra-cell-repurposing Dummy Transistors and Semiconductor Device Having Repurposed Formerly Dummy Transistors
TSMC NANJING COMPANY, LIMITED
0 cites
US124234952025
Current-distributing Pin Structure and Method of Forming Same
TSMC NANJING COMPANY, LIMITED
0 cites
US123684362025
Semiconductor Device with Common Deep N-well for Different Voltage Domains and Method of Forming Same
TSMC NANJING COMPANY, LIMITED
0 cites
US122311172025
Integrated Circuit and Method of Manufacturing Same
TSMC NANJING COMPANY, LIMITED
0 cites
US121918602025
Level Shifter Circuit and Method of Operating the Same
TSMC CHINA COMPANY, LIMITED
0 cites
US121006522024
Multilevel Interconnection Structure and Method for Forming the Same
TSMC CHINA COMPANY LIMITED
0 cites
US120342972024
Integrated Circuit and an Operation Method Thereof
TSMC CHINA COMPANY LIMITED
0 cites
US120154102024
Semiconductor Device with Daisy-chained Delay Cells and Method of Forming Same
TSMC NANJING COMPANY, LIMITED
0 cites
US118433822023
Level Shifter Circuit and Method of Operating the Same
TSMC CHINA COMPANY, LIMITED
0 cites
US117775012023
Method of Method of Forming a Multi-bit Level Shifter
TSMC NANJING COMPANY, LIMITED
0 cites
US116954132023
Integrated Circuit and Method of Manufacturing Same
TSMC NANJING COMPANY, LIMITED
0 cites
US116523482023
Integrated Circuit and an Operation Method Thereof
TSMC CHINA COMPANY LIMITED
0 cites