9 Patents
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- US125385012026Structure Providing Poly-resistor Under Shallow Trench Isolation and Above High Resistivity Polysilicon Layer
Globalfoundries U.S. Inc.
0 cites - 0 cites
- US120280532024Structure Including Resistor Network for Back Biasing FET Stack
Globalfoundries U.S. Inc.
0 cites - US119013042024Integrated Circuit Structure with Fluorescent Material, and Related Methods
Globalfoundries U.S. Inc.
0 cites - US116644122023Structure Providing Poly-resistor Under Shallow Trench Isolation and Above High Resistivity Polysilicon Layer
Globalfoundries U.S. Inc.
0 cites - US116371732023Structure Including Polycrystalline Resistor with Dopant-including Polycrystalline Region Thereunder
Globalfoundries U.S. Inc.
0 cites - 0 cites
- US115455772023Semiconductor Structure with In-device High Resistivity Polycrystalline Semiconductor Element and Method
Globalfoundries U.S. Inc.
0 cites