5 Patents
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- US123519432025N-type Gan Crystal, Gan Wafer, and Gan Crystal, Gan Wafer and Nitride Semiconductor Device Production Method
MITSUBISHI CHEMICAL CORPORATION
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- US119879032024N-type Gan Crystal, Gan Wafer, and Gan Crystal, Gan Wafer and Nitride Semiconductor Device Production Method
MITSUBISHI CHEMICAL CORPORATION
0 cites - US115880962023Method to Achieve Active P-type Layer/layers in Iii-nitrtde Epitaxial or Device Structures Having Buried P-type Layers
The Regents Of The University Of California
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