Patents/Inventors

Yushi Hu

WuhanCN19 patents

20 Patents

US125751052026
Multiple-stack Three-dimensional Memory Device and Fabrication Method Thereof
YANGTZE MEMORY TECHNOLOGIES CO., Ltd.
0 cites
US124904402025
Three-dimensional Memory Devices and Fabricating Methods Thereof
YANGTZE MEMORY TECHNOLOGIES CO., Ltd.
0 cites
US124462172025
3D NAND Memory Device and Method of Forming the Same
YANGTZE MEMORY TECHNOLOGIES CO., Ltd.
0 cites
US122794202025
Memory Having a Continuous Channel
Micron Technology, Inc.
0 cites
US122611122025
Signal Lines in Memory Devices and Methods for Forming the Same
WUXI SMART MEMORIES TECHNOLOGIES CO., Ltd.
0 cites
US121855372024
Integrated Structures
Micron Technology, Inc.
0 cites
US120637802024
Memory Cell Structure of a Three-dimensional Memory Device
YANGTZE MEMORY TECHNOLOGIES CO., Ltd.
0 cites
US119918802024
Three-dimensional Memory Devices and Fabricating Methods Thereof
Yangtze Memory Technologies Co., Ltd.
0 cites
US119688322024
Multiple-stack Three-dimensional Memory Device and Fabrication Method Thereof
Yangtze Memory Technologies Co., Ltd.
0 cites
US119439282024
Method for Forming Channel Hole Plug of Three-dimensional Memory Device
Yangtze Memory Technologies Co., Ltd.
0 cites
US118896862024
Vertical Memory Devices
YANGTZE MEMORY TECHNOLOGIES CO., Ltd.
0 cites
US118390872023
Ferroelectric Memory Devices with Reduced Edge Defects and Methods for Forming the Same
WUXI PETABYTE TECHNOLOGIES CO., Ltd.
0 cites
US118056432023
Method of Fabrication Thereof a Multi-level Vertical Memory Device Including Inter-level Channel Connector
Yangtze Memory Technologies Co., Ltd.
0 cites
US118056462023
Three-dimensional Memory Devices and Methods for Forming the Same
Yangtze Memory Technologies Co., Ltd.
0 cites
US117372632023
3D NAND Memory Device and Method of Forming the Same
Yangtze Memory Technologies Co., Ltd.
0 cites
US116996572023
Three-dimensional Memory Devices Having a Plurality of NAND Strings Located Between a Substrate and a Single Crystalline Silicon Layer
Yangtze Memory Technologies Co., Ltd.
0 cites
US116902192023
Three-dimensional Memory Devices Having Through Array Contacts and Methods for Forming the Same
YANGTZE MEMORY TECHNOLOGIES CO., Ltd.
0 cites
US116580332023
Methods of Forming Assemblies Having Heavily Doped Regions
Micron Technology, Inc.
0 cites
US116534942023
Memory Cell Pillar Including Source Junction Plug
Micron Technology, Inc.
0 cites
US115813222023
Three-dimensional Memory Devices Having Through Array Contacts and Methods for Forming the Same
YANGTZE MEMORY TECHNOLOGIES CO., Ltd.
0 cites