13 Patents
- US125934962026Multiple Threshold Voltage Implementation Through Lanthanum Incorporation
Taiwan Semiconductor Manufacturing Co., Ltd.
0 cites - US124647892025Semiconductor Device Structure and Method for Forming the Semiconductor Device Structure
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US124263092025Method of Manufacturing Semiconductor Devices and Semiconductor Devices
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US123175742025Device Providing Multiple Threshold Voltages and Methods of Making the Same
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US123026272025Semiconductor Device with Non-conformal Gate Dielectric Layers
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US121549642024Metal Gates with Layers for Transistor Threshold Voltage Tuning and Methods of Forming the Same
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US121426402024Semiconductor Structures with Multiple Threshold Voltage Offerings and Methods Thereof
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US120806042024Gate-all-around Semiconductor Device and Method
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US120094002024Device Providing Multiple Threshold Voltages and Methods of Making the Same
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US119087452024Semiconductor Device with Non-conformal Gate Dieletric Layers
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US117912142023Gate-all-around Semiconductor Device and Method
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US116642792023Multiple Threshold Voltage Implementation Through Lanthanum Incorporation
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - US116055632023Semiconductor Device with Non-conformal Gate Dielectric Layers
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites