12 Patents
- US124190742025Barrier Structure Configured to Increase Performance of III-V Devices
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US123639382025Cap Structure Coupled to Source to Reduce Saturation Current in HEMT Device
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - 0 cites
- US122782722025Source Leakage Current Suppression by Source Surrounding Gate Structure
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US121007572024Cap Structure Coupled to Source to Reduce Saturation Current in HEMT Device
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US120948382024Crack Stop Ring Trench to Prevent Epitaxy Crack Propagation
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US120465372024Front-end-of-line (FEOL) Through Semiconductor-on-substrate via (TSV)
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US117988992023Crack Stop Ring Trench to Prevent Epitaxy Crack Propagation
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US117913882023Source Leakage Current Suppression by Source Surrounding Gate Structure
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US117424192023Cap Structure Coupled to Source to Reduce Saturation Current in HEMT Device
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US117157922023Barrier Structure Configured to Increase Performance of III-V Devices
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - 0 cites