20 Patents
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- US125882622026Sacrificial Gate Capping Layer for Gate Protection During Source/drain Contact Opening
Tokyo Electron Limited
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- US125664542026Intelligent Management Method and Management System of Natural Pasture Using Multi-machine Collaboration of Uavs
Institute Of Agricultural Economics And Development, CAAS
0 cites - US124513292025Plasma Processing Apparatus with Tunable Electrical Characteristic
TOKYO ELECTRON LIMITED
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- US122886922025Method of Forming a FET Structure by Selective Deposition of Film on Source/drain Contact
TOKYO ELECTRON LIMITED
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- US122372162025Method for Filling Recessed Features in Semiconductor Devices with a Low-resistivity Metal
Tokyo Electron Limited
0 cites - US121892972025Methods for Extreme Ultraviolet (EUV) Resist Patterning Development
Tokyo Electron Limited
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- US120401762024Technologies for High Aspect Ratio Carbon Etching with Inserted Charge Dissipation Layer
Tokyo Electron Limited
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- US119423072024Plasma Processing with Radio Frequency (RF) Source and Bias Signal Waveforms
Tokyo Electron Limited
0 cites - US116519672023Non-atomic Layer Deposition (ALD) Method of Forming Sidewall Passivation Layer During High Aspect Ratio Carbon Layer Etch
Tokyo Electron Limited
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