Yun Chen Hsieh

8 Patents

• US123811762025

  Semiconductor Structure Having a Conductive Feature Comprising an Adhesion Layer and a Metal Region Over and Contacting the Adhesion Layer

  Taiwan Semiconductor Manufacturing Company, Ltd.

  0 cites
• US123158192025

  Method of Forming Rdls and Structure Formed Thereof

  Taiwan Semiconductor Manufacturing Company, Ltd.

  0 cites
• US120626032024

  Semiconductor Device Having via Sidewall Adhesion with Encapsulant

  TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.

  0 cites
• US120209832024

  Processes for Reducing Leakage and Improving Adhesion

  TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.

  0 cites
• US117423172023

  Process Including a Re-etching Process for Forming a Semiconductor Structure

  TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.

  0 cites
• US116519942023

  Processes for Reducing Leakage and Improving Adhesion

  TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.

  0 cites
• US116005742023

  Method of Forming RDLS and Structure Formed Thereof

  TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.

  0 cites
• US115879022023

  Semiconductor Structure and Method of Forming the Same

  TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.

  0 cites