5 Patents
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- US124944042025Semiconductor Device Including Stop Islands and Method for Manufacturing Semiconductor Device
MITSUBISHI ELECTRIC CORPORATION
0 cites - US124761652025Nitride Semiconductor Device, and Method of Manufacturing Nitride Semiconductor Device
MITSUBISHI ELECTRIC CORPORATION
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- US119617652024Method for Manufacturing a Semiconductor Substrate and Device by Bonding an Epitaxial Substrate to a First Support Substrate, Forming a First and Second Protective Thin Film Layer, and Exposing and Bonding a Nitride Semiconductor Layer to a Second Support Substrate
MITSUBISHI ELECTRIC CORPORATION
0 cites