Patents/Inventors

Yujiro Ishihara

TochigiJP1 patent

2 Patents

US116803392023
Method of Manufacturing Group III Nitride Semiconductor Substrate, Group III Nitride Semiconductor Substrate, and Bulk Crystal
FURUKAWA CO., Ltd.
0 cites
US116623742023
Group III Nitride Semiconductor Substrate
FURUKAWA CO., Ltd.
0 cites