2 Patents
- US121599432024Gan Vertical-channel Junction Field-effect Transistors with Regrown P-gan by Metal Organic Chemical Vapor Deposition (MOCVD)
Arizona Board Of Regents On Behalf Of Arizona State University
0 cites - US116264832023Low-leakage Regrown Gan P-n Junctions for Gan Power Devices
Arizona Board Of Regents On Behalf Of Arizona State University
0 cites