Yuji Nagumo

4 Patents

• US125017122025

  Method of Forming Grooves and Vertical Cracks in a Wafer Comprising Individual Semiconductor Elements to Separate the Semiconductor Elements by Cleaving the Wafer Along the Grooves and the Vertical Cracks

  MIRISE Technologies Corporation

  0 cites
• US124244962025

  Manufacturing Method of Semiconductor Device

  MIRISE Technologies Corporation

  0 cites
• US124263292025

  Silicon Carbide Semiconductor Device Including a Side Silicide Layer and Method for Manufacturing the Same

  MIRISE Technologies Corporation

  0 cites
• US118814072024

  Processed Wafer and Method of Manufacturing Chip Formation Wafer

  DISCO Corporation

  0 cites