Yuichiro Tokuda

6 Patents

• US123717792025

  Reaction Chamber Comprising a Rotating Element for the Deposition of a Semiconductor Material

  DENSO CORPORATION

  0 cites
• US123314232025

  Reaction Chamber for a Deposition Reactor with Interspace and Lower Closing Element and Reactor

  DENSO CORPORATION

  0 cites
• US122528082025

  Silicon Carbide Single Crystal Wafer, and Methods for Manufacturing Silicon Carbide Single Crystal Ingot and the Silicon Carbide Single Crystal Wafer

  DENSO CORPORATION

  0 cites
• US120717092024

  Methods for Manufacturing Silicon Carbide Single Crystal Ingot and Silicon Carbide Single Crystal Wafer

  DENSO CORPORATION

  0 cites
• US118460402023

  Silicon Carbide Single Crystal

  CENTRAL RESEARCH INSTITUTE OF ELECTRIC POWER INDUSTRY

  0 cites
• US115426312023

  Method for Producing P-type 4h-sic Single Crystal

  DENSO CORPORATION

  0 cites