Patents/Inventors

Yuan-tai Tseng

ZhubeiTW18 patents

19 Patents

US124777462025
Method of Forming Memory Cell
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites
US123693322025
Memory Device for Reducing Thermal Crosstalk
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites
US123546952025
Trench Formation Scheme for Programmable Metallization Cell to Prevent Metal Redeposit
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites
US123102612025
Memory Device Having via Landing Protection
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites
US123027672025
Buffer Layer in Memory Cell to Prevent Metal Redeposition
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites
US122741822025
Sidewall Spacer Structure for Memory Cell
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites
US120482582024
Phase Change Memory Device and Method for Manufacturing the Same
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites
US119504342024
Memory Device for Reducing Thermal Crosstalk
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites
US118716862024
Resistive Random-access Memory (RRAM) Cell with Recessed Bottom Electrode Sidewalls
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites
US118551272023
Semiconductor Structure and Method for Forming the Same
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY Ltd.
0 cites
US118189622023
Sidewall Spacer Structure for Memory Cell
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites
US118056602023
Semiconductor Structure
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY Ltd.
0 cites
US117857862023
Trench Formation Scheme for Programmable Metallization Cell to Prevent Metal Redeposit
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites
US117858612023
Semiconductor Structure and Method of Manufacturing the Same
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY Ltd.
0 cites
US117514062023
3D RRAM Cell Structure for Reducing Forming and Set Voltages
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites
US117422622023
Integrated Circuit Having a Resistor Layer Partially Overlapping Endcaps
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites
US116902322023
High Density Memory Devices with Low Cell Leakage and Methods for Forming the Same
Taiwan Semiconductor Manufacturing Company Limited
0 cites
US116659112023
Method of Forming Memory Cell
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites
US115692962023
Semiconductor Structure
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY Ltd.
0 cites